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2SC3789

Specifications

SKU: 12026

BUY 2SC3789 https://www.utsource.net/itm/p/12026.html
High-Definition CRT Display, Video Output Applications
Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - - 100 V
Base-Emitter Voltage VBE - 1.5 2.5 V
Collector Current IC - - 3 A
Base Current IB - - 0.3 A
Power Dissipation PT - - 65 W
Transition Frequency fT - 400 - MHz
Storage Temperature TSTG -55 - 150 °C
Operating Temperature TA -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the transistor to static electricity.
    • Use proper heat sinks when operating at high power levels to prevent overheating.
  2. Mounting:

    • Ensure that the mounting surface is clean and flat.
    • Apply thermal paste between the transistor and the heat sink for better heat dissipation.
  3. Biasing:

    • Set the base current (IB) appropriately to achieve the desired collector current (IC).
    • Use a current-limiting resistor in series with the base to prevent excessive base current.
  4. Operation:

    • Do not exceed the maximum ratings for collector-emitter voltage (VCE), collector current (IC), and power dissipation (PT).
    • Ensure that the operating temperature remains within the specified range to avoid damage.
  5. Testing:

    • Use a multimeter to check the continuity and resistance values between the pins.
    • Test the transistor in a controlled environment to verify its performance before integrating it into a circuit.
  6. Storage:

    • Store the transistor in a dry, cool place away from direct sunlight and moisture.
    • Keep the transistor in its original packaging until ready for use to protect it from static discharge.
(For reference only)

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