Specifications
SKU: 12061
Silicon NPN epitaxial planer typeFor high-frequency amplification
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 400 | V |
Collector-Base Voltage | VCBO | - | - | 500 | V |
Emitter-Base Voltage | VEBO | - | - | 6 | V |
Collector Current | IC | - | 300 | - | mA |
Base Current | IB | - | 30 | - | mA |
Power Dissipation | PT | - | - | 125 | mW |
Operating Temperature | TA | -55 | - | 150 | °C |
Storage Temperature | TSTG | -65 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure the transistor is mounted on a suitable heatsink if operating near its maximum power dissipation.
- Use appropriate mounting hardware to secure the transistor without excessive mechanical stress.
Biasing:
- Apply bias voltages carefully to avoid exceeding the maximum ratings.
- Use resistors to limit base current and prevent damage to the transistor.
Operating Conditions:
- Keep the ambient temperature within the specified range to ensure reliable operation.
- Monitor the junction temperature to prevent overheating, especially under high power conditions.
Storage:
- Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
- Handle with care to avoid static discharge, which can damage the device.
Testing:
- Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
- Test the circuit under controlled conditions to ensure it operates as expected.
Safety:
- Always disconnect power before making any changes to the circuit.
- Follow all safety guidelines and regulations when working with electrical components.
Inquiry - 2SC3931