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2SC3931

Specifications

SKU: 12061

BUY 2SC3931 https://www.utsource.net/itm/p/12061.html
Silicon NPN epitaxial planer typeFor high-frequency amplification
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 400 V
Collector-Base Voltage VCBO - - 500 V
Emitter-Base Voltage VEBO - - 6 V
Collector Current IC - 300 - mA
Base Current IB - 30 - mA
Power Dissipation PT - - 125 mW
Operating Temperature TA -55 - 150 °C
Storage Temperature TSTG -65 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure the transistor is mounted on a suitable heatsink if operating near its maximum power dissipation.
    • Use appropriate mounting hardware to secure the transistor without excessive mechanical stress.
  2. Biasing:

    • Apply bias voltages carefully to avoid exceeding the maximum ratings.
    • Use resistors to limit base current and prevent damage to the transistor.
  3. Operating Conditions:

    • Keep the ambient temperature within the specified range to ensure reliable operation.
    • Monitor the junction temperature to prevent overheating, especially under high power conditions.
  4. Storage:

    • Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
    • Handle with care to avoid static discharge, which can damage the device.
  5. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
    • Test the circuit under controlled conditions to ensure it operates as expected.
  6. Safety:

    • Always disconnect power before making any changes to the circuit.
    • Follow all safety guidelines and regulations when working with electrical components.
(For reference only)

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