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2SK1944

Specifications

SKU: 12928

BUY 2SK1944 https://www.utsource.net/itm/p/12928.html
N-channel MOS-FET
Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage V(DS) - - 500 V Maximum voltage between drain and source with gate open
Gate-Source Voltage V(GS) -20 - 20 V Maximum voltage between gate and source
Drain Current I(D) - 15 30 A Continuous drain current at Tc = 25°C
Pulse Drain Current I(DM) - 60 - A Maximum pulse drain current (t < 10 ms, duty cycle 1%)
Power Dissipation P(T) - 300 - W Maximum power dissipation at Tc = 25°C
Junction Temperature T(J) - - 175 °C Maximum junction temperature
Storage Temperature T(STG) -55 - 150 °C Operating and storage temperature range
Thermal Resistance R(θJC) - 0.5 - °C/W Thermal resistance from junction to case

Instructions for Use:

  1. Handling Precautions:

    • Avoid applying voltages exceeding the maximum ratings.
    • Handle the device with care to avoid mechanical damage.
    • Use proper ESD protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure good thermal contact between the device and the heat sink.
    • Apply thermal compound to enhance heat transfer.
    • Tighten the mounting screws to the recommended torque to ensure good electrical and thermal contact.
  3. Biasing:

    • Ensure that the gate-source voltage (V(GS)) is within the specified limits to avoid damaging the gate oxide.
    • Use appropriate gate drive circuits to provide the necessary drive current and voltage.
  4. Operation:

    • Operate the device within its safe operating area (SOA) to prevent thermal runaway and device failure.
    • Monitor the junction temperature to ensure it does not exceed the maximum rated temperature.
    • Use a heatsink or cooling system to maintain the device within its operational temperature range.
  5. Storage:

    • Store the device in a dry, cool place away from direct sunlight and corrosive environments.
    • Follow the recommended storage temperature range to prevent degradation of the device.
  6. Testing:

    • Use appropriate test equipment and procedures to verify the device parameters.
    • Ensure that the test conditions (voltage, current, temperature) are within the specified limits.

By following these guidelines, you can ensure reliable and efficient operation of the 2SK1944 transistor.

(For reference only)

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