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Specifications
SKU: 102886
512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Device | - | AM28F512-120JC | - |
| Type | - | Flash Memory | - |
| Density | Storage Capacity | 512 K x 8 | bits |
| Vcc (Operating Voltage) | Supply Voltage Range | 2.7 to 3.6 | V |
| Vpp (Programming Voltage) | Programming Voltage | Not Required | - |
| tACC (Access Time) | Access Time | 120 | ns |
| tWP (Write Protect) | Write Protect Pin | Active Low | - |
| tCE (Chip Enable) | Chip Enable Pin | Active Low | - |
| tOE (Output Enable) | Output Enable Pin | Active Low | - |
| tBYTE (Byte Write Time) | Byte Write Time | 5 | ms |
| tSE (Sector Erase Time) | Sector Erase Time | 1 | s |
| tBE (Block Erase Time) | Block Erase Time | 4 | s |
| tCE# (Chip Enable Disable Time) | Chip Enable Disable Time | 20 | ns |
| tOE# (Output Enable Disable Time) | Output Enable Disable Time | 20 | ns |
| tWP# (Write Protect Disable Time) | Write Protect Disable Time | 20 | ns |
| tCH (Chip Enable Hold Time) | Chip Enable Hold Time | 20 | ns |
| tOH (Output Enable Hold Time) | Output Enable Hold Time | 20 | ns |
| tWH (Write Protect Hold Time) | Write Protect Hold Time | 20 | ns |
| Operating Temperature | Operating Temperature Range | -40 to +85 | °C |
| Storage Temperature | Storage Temperature Range | -65 to +150 | °C |
| Package | Package Type | 32-Pin TSOP | - |
Instructions:
Power Supply:
- Ensure that the supply voltage (Vcc) is within the specified range of 2.7 to 3.6V.
- No external programming voltage (Vpp) is required for this device.
Pin Configuration:
- Vcc: Connect to the positive power supply.
- GND: Connect to ground.
- A0-A18: Address lines.
- D0-D7: Data lines.
- CE# (Chip Enable): Active low. Must be pulled low to enable the chip.
- OE# (Output Enable): Active low. Must be pulled low to enable data output.
- WE# (Write Enable): Active low. Used for write operations.
- WP# (Write Protect): Active low. When high, write operations are inhibited.
- R/B (Ready/Busy): Indicates the status of the device. High when ready, low when busy.
Read Operation:
- Set CE# and OE# low.
- Apply the desired address to the address lines.
- The data will be available on the data lines after the access time (tACC).
Write Operation:
- Set CE# and WE# low.
- Apply the desired address to the address lines.
- Apply the data to be written to the data lines.
- The write operation will take approximately 5ms (tBYTE).
Erase Operation:
- For sector erase, set the appropriate address and issue the sector erase command.
- For block erase, set the appropriate address and issue the block erase command.
- The sector erase time (tSE) is 1 second, and the block erase time (tBE) is 4 seconds.
Temperature Considerations:
- Ensure that the operating temperature is within the range of -40°C to +85°C.
- Store the device in an environment where the temperature does not exceed -65°C to +150°C.
Handling Precautions:
- Handle the device with care to avoid static discharge.
- Follow standard ESD (Electrostatic Discharge) precautions during handling and installation.
Inquiry - AM28F512-120JC
