BUY BSS129 https://www.utsource.net/itm/p/105750.html
N-Channel Depletion-Mode MOSFET Transistor20Ω，0.15ANMOSFET
The BSS129 is a P-channel enhancement mode field-effect transistor (FET) manufactured by Infineon/Siemens. It is housed in a TO-92 package and is designed for low-voltage, low-current applications. Description: The BSS129 is a P-channel enhancement mode field-effect transistor (FET) with a maximum drain-source voltage of -20V and a maximum drain current of -500mA. It is designed for low-voltage, low-current applications, such as switching and level shifting. Features: Maximum drain-source voltage: -20V Maximum drain current: -500mA Low-voltage, low-current applications TO-92 package Applications: Switching Level shifting Low-voltage, low-current applications (For reference only)