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HFA1115IP

Specifications

SKU: 117468

BUY HFA1115IP https://www.utsource.net/itm/p/117468.html
Mini-Stripax Plus Replacement Blade; Conductor Size AWG:24-22; Features:Includes top & bottom blades, spring & wire stop; Specially formed stripping blades ensure no damage to the conductor; Easy to install RoHS Compliant: Yes
Parameter Description
Part Number HFA1115IP
Type N-Channel Enhancement Mode MOSFET
VDS Drain-to-Source Voltage: 100 V
VGS Gate-to-Source Voltage: ±20 V
ID Continuous Drain Current: 15 A (at 25°C)
PD Total Power Dissipation: 150 W (at 25°C)
RDS(on) On-State Resistance: 0.065 Ω (max) at VGS = 10 V, ID = 15 A
fT Transition Frequency: 3 MHz
Qg Total Gate Charge: 90 nC
Qgd Gate-Drain Charge: 25 nC
Qgs Gate-Source Charge: 15 nC
Package TO-220AB
Operating Temp. -55°C to +150°C
Storage Temp. -65°C to +175°C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage power dissipation.
    • Use a thermal compound between the MOSFET and the heatsink for better thermal conductivity.
  2. Biasing:

    • Apply a gate voltage (VGS) within the specified range to turn the MOSFET on or off.
    • Avoid exceeding the maximum gate voltage to prevent damage.
  3. Current Handling:

    • Do not exceed the continuous drain current (ID) rating.
    • For high current applications, consider derating the current based on ambient temperature and cooling conditions.
  4. Power Dissipation:

    • Monitor the power dissipation (PD) to ensure it does not exceed the rated value.
    • Use adequate cooling methods to keep the junction temperature within safe limits.
  5. Switching:

    • Minimize switching losses by ensuring fast transitions between on and off states.
    • Use appropriate gate drive circuits to achieve optimal performance.
  6. Storage and Handling:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid mechanical stress and static electricity.
  7. Testing:

    • Perform initial testing under controlled conditions to verify correct operation.
    • Use a suitable test setup to measure parameters such as RDS(on) and VDS.
  8. Safety:

    • Follow all safety guidelines and regulations when handling and installing the MOSFET.
    • Ensure proper grounding and isolation to prevent electrical hazards.
(For reference only)

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