Specifications
SKU: 156253
CURRENT SENSING SINGLE CHANNEL DRIVER
Below is the parameter table and instructions for the IR2127, a high-voltage, high-speed power MOSFET driver from Infineon Technologies.
IR2127 Parameter Table
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Supply Voltage | VCC | 10 | - | 20 | V | - |
High-Side Floating Voltage | VBS | 10 | - | 600 | V | - |
Input High Voltage | VIH | 2.0 | - | 5.5 | V | - |
Input Low Voltage | VIL | 0.8 | - | 2.0 | V | - |
Output Source Current | IOH | - | 2.0 | - | A | VCC = 15V |
Output Sink Current | IOL | - | 3.0 | - | A | VCC = 15V |
Propagation Delay | td | - | 60 | - | ns | VCC = 15V, VOUT = 50% VCC |
Delay Skew | tskew | - | 20 | - | ns | VCC = 15V |
Operating Temperature Range | TA | -40 | - | 125 | °C | - |
Storage Temperature Range | TSTG | -65 | - | 150 | °C | - |
IR2127 Instructions
Supply Voltage (VCC):
- The supply voltage should be between 10V and 20V.
- Ensure that the supply voltage is stable and within the specified range to avoid damage to the device.
High-Side Floating Voltage (VBS):
- The high-side floating voltage can range from 10V to 600V.
- This allows the device to drive high-side MOSFETs in high-voltage applications.
Input Voltage Levels:
- The input high voltage (VIH) should be between 2.0V and 5.5V.
- The input low voltage (VIL) should be between 0.8V and 2.0V.
- Ensure that the input signals are within these ranges to prevent misoperation.
Output Current:
- The output source current (IOH) is typically 2.0A when VCC is 15V.
- The output sink current (IOL) is typically 3.0A when VCC is 15V.
- These values ensure that the device can drive MOSFETs with sufficient gate current.
Propagation Delay and Delay Skew:
- The propagation delay (td) is typically 60ns when VCC is 15V.
- The delay skew (tskew) is typically 20ns when VCC is 15V.
- These parameters are important for timing considerations in high-speed switching applications.
Operating and Storage Temperature:
- The operating temperature range (TA) is from -40°C to 125°C.
- The storage temperature range (TSTG) is from -65°C to 150°C.
- Ensure that the device is not exposed to temperatures outside these ranges to prevent damage or reduced performance.
Layout Considerations:
- Use short, wide traces for the high-frequency signals to minimize parasitic inductance and capacitance.
- Place decoupling capacitors close to the VCC and GND pins to ensure stable operation.
Protection Features:
- The IR2127 includes built-in protection features such as under-voltage lockout (UVLO) to prevent operation when the supply voltage is too low.
- Ensure that the UVLO threshold is appropriate for your application to avoid unintended shutdowns.
By following these instructions and parameters, you can effectively use the IR2127 in your high-voltage, high-speed power MOSFET driving applications.
(For reference only)Inquiry - IR2127