Share:


IR2127

Specifications

SKU: 156253

BUY IR2127 https://www.utsource.net/itm/p/156253.html
CURRENT SENSING SINGLE CHANNEL DRIVER

Below is the parameter table and instructions for the IR2127, a high-voltage, high-speed power MOSFET driver from Infineon Technologies.

IR2127 Parameter Table

Parameter Symbol Min Typ Max Unit Conditions
Supply Voltage VCC 10 - 20 V -
High-Side Floating Voltage VBS 10 - 600 V -
Input High Voltage VIH 2.0 - 5.5 V -
Input Low Voltage VIL 0.8 - 2.0 V -
Output Source Current IOH - 2.0 - A VCC = 15V
Output Sink Current IOL - 3.0 - A VCC = 15V
Propagation Delay td - 60 - ns VCC = 15V, VOUT = 50% VCC
Delay Skew tskew - 20 - ns VCC = 15V
Operating Temperature Range TA -40 - 125 °C -
Storage Temperature Range TSTG -65 - 150 °C -

IR2127 Instructions

  1. Supply Voltage (VCC):

    • The supply voltage should be between 10V and 20V.
    • Ensure that the supply voltage is stable and within the specified range to avoid damage to the device.
  2. High-Side Floating Voltage (VBS):

    • The high-side floating voltage can range from 10V to 600V.
    • This allows the device to drive high-side MOSFETs in high-voltage applications.
  3. Input Voltage Levels:

    • The input high voltage (VIH) should be between 2.0V and 5.5V.
    • The input low voltage (VIL) should be between 0.8V and 2.0V.
    • Ensure that the input signals are within these ranges to prevent misoperation.
  4. Output Current:

    • The output source current (IOH) is typically 2.0A when VCC is 15V.
    • The output sink current (IOL) is typically 3.0A when VCC is 15V.
    • These values ensure that the device can drive MOSFETs with sufficient gate current.
  5. Propagation Delay and Delay Skew:

    • The propagation delay (td) is typically 60ns when VCC is 15V.
    • The delay skew (tskew) is typically 20ns when VCC is 15V.
    • These parameters are important for timing considerations in high-speed switching applications.
  6. Operating and Storage Temperature:

    • The operating temperature range (TA) is from -40°C to 125°C.
    • The storage temperature range (TSTG) is from -65°C to 150°C.
    • Ensure that the device is not exposed to temperatures outside these ranges to prevent damage or reduced performance.
  7. Layout Considerations:

    • Use short, wide traces for the high-frequency signals to minimize parasitic inductance and capacitance.
    • Place decoupling capacitors close to the VCC and GND pins to ensure stable operation.
  8. Protection Features:

    • The IR2127 includes built-in protection features such as under-voltage lockout (UVLO) to prevent operation when the supply voltage is too low.
    • Ensure that the UVLO threshold is appropriate for your application to avoid unintended shutdowns.

By following these instructions and parameters, you can effectively use the IR2127 in your high-voltage, high-speed power MOSFET driving applications.

(For reference only)

 Inquiry - IR2127