BUY MG50Q6ES1 https://www.utsource.net/itm/p/200238.html
Catalog Scans - Shortform Datasheet
Description: The MG50Q6ES1 is a high-performance, high-efficiency, insulated-gate bipolar transistor (IGBT) module with a built-in anti-parallel diode. Features: High voltage: 600V Low on-state resistance Low switching loss High speed switching Low noise High current capacity Built-in anti-parallel diode Applications: The MG50Q6ES1 is suitable for use in applications such as motor drives, UPS, welding machines, and solar inverters. It can also be used in high-frequency switching applications such as frequency converters, AC/DC converters, and DC/DC converters. (For reference only)