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FLAT-BASE TYPE INSULATED PACKAGE
The Mitsubishi PM30RSF060 is a bipolar N-channel Power MOSFET Module, which is a power semiconductor device that switches high current and voltage using the gate voltage as a control input. It is designed to drive high power loads in applications such as motor control, power supply, motor drives and other switching operations. Description The PM30RSF060 is a 600V bipolar N-channel Power MOSFET Module with an integrated built-in gate driver. The gate driver is capable of delivering high-power pulses up to 2.5kW. The module is designed with a low on-resistance of 130mΩ and a high current handling capacity of 30A. The device also features a high frequency switching capability of up to 60kHz. Features 600V bipolar N-channel Power MOSFET module Built-in gate driver Low on-resistance of 130mΩ High current handling capacity of up to 30A High frequency switching up to 60kHz Applications The PM30RSF060 is ideal for motor control, power supply, motor drives and other switching applications that require high current and voltage. It is well suited for applications such as robotic control, industrial automation, and energy conversion. (For reference only)