Specifications
SKU: 201648
HIGH POWER SWITCHING USE INSULATED TYPE
QM100DY-H is an IGBT power module manufactured by Mitsubishi. It is an insulated gate bipolar transistor (IGBT) module with a high-performance, low-power consumption, high-efficiency application. The features of the QM100DY-H IGBT power module include high blocking voltage of 1200V, low forward voltage drop of 1.95V, high collector current of 110A and low ON-state resistance of 1.1OHM. It also has a soft recovery gate control, a gate drive capability of 10A, temperature stability of up to 150 degrees Celsius, and an anti-corrosion coating on the surface. This IGBT power module is widely used in a variety of industrial applications such as robotics, inverters, rectifiers, motor controllers, uninterruptible power supplies, and power transmission systems. It is also used in motor drive applications, automotive systems, renewable energy sources, and lighting systems. (For reference only)
Inquiry - QM100DY-H