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2SA720-R

Specifications

SKU: 205776

BUY 2SA720-R https://www.utsource.net/itm/p/205776.html
Silicon PNP epitaxial planer type(For low-frequency driver amplification)
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE - - 45 V
Base-Emitter Voltage VBE - - 6 V
Collector Current IC - - 1.5 A
Base Current IB - - 0.15 A
Power Dissipation PT - - 625 mW
Operating Temperature Top -55 - 150 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the transistor to temperatures outside the specified operating range.
    • Handle the device with care to prevent mechanical damage.
  2. Mounting:

    • Ensure proper heat sinking if the transistor is expected to dissipate significant power.
    • Follow recommended soldering profiles to avoid thermal shock.
  3. Biasing:

    • Use appropriate biasing circuits to ensure stable operation.
    • Keep the base-emitter voltage within the specified limits to avoid damage.
  4. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
    • Test the circuit under typical operating conditions to ensure reliable performance.
  5. Storage:

    • Store the transistor in a dry, cool place away from direct sunlight.
    • Keep the device in its original packaging until ready for use to protect against static discharge.
  6. Applications:

    • Suitable for general-purpose amplification and switching applications.
    • Ideal for audio and RF circuits due to its low noise characteristics.
  7. Safety:

    • Always disconnect power before making any changes to the circuit.
    • Use appropriate personal protective equipment (PPE) when handling electronic components.
(For reference only)

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