Specifications
SKU: 205776
Silicon PNP epitaxial planer type(For low-frequency driver amplification)
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 45 | V |
Base-Emitter Voltage | VBE | - | - | 6 | V |
Collector Current | IC | - | - | 1.5 | A |
Base Current | IB | - | - | 0.15 | A |
Power Dissipation | PT | - | - | 625 | mW |
Operating Temperature | Top | -55 | - | 150 | °C |
Storage Temperature | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- Avoid exposing the transistor to temperatures outside the specified operating range.
- Handle the device with care to prevent mechanical damage.
Mounting:
- Ensure proper heat sinking if the transistor is expected to dissipate significant power.
- Follow recommended soldering profiles to avoid thermal shock.
Biasing:
- Use appropriate biasing circuits to ensure stable operation.
- Keep the base-emitter voltage within the specified limits to avoid damage.
Testing:
- Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
- Test the circuit under typical operating conditions to ensure reliable performance.
Storage:
- Store the transistor in a dry, cool place away from direct sunlight.
- Keep the device in its original packaging until ready for use to protect against static discharge.
Applications:
- Suitable for general-purpose amplification and switching applications.
- Ideal for audio and RF circuits due to its low noise characteristics.
Safety:
- Always disconnect power before making any changes to the circuit.
- Use appropriate personal protective equipment (PPE) when handling electronic components.
Inquiry - 2SA720-R