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Specifications
SKU: 258476
PNP POWER TRANSISTOR SILICON AMP
Below is the parameter table and instructions for the 2N5876 N-Channel MOSFET:
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 100 | V |
| Gate-Source Voltage | VGS | -10 | - | 20 | V |
| Continuous Drain Current | ID | - | - | 3.4 | A |
| Pulse Drain Current (tp = 10 μs) | ID(p) | - | - | 10 | A |
| Power Dissipation | Ptot | - | - | 50 | W |
| Junction Temperature | TJ | -55 | - | 150 | °C |
| Storage Temperature Range | Tstg | -65 | - | 150 | °C |
| Gate Charge | QG | - | 49 | - | nC |
| Input Capacitance | Ciss | - | 1300 | - | pF |
| Output Capacitance | Coss | - | 300 | - | pF |
| Threshold Gate Voltage | VGS(th) | 1.5 | 2.5 | 4.0 | V |
| On-State Resistance | RDS(on) | - | 0.21 | - | Ω |
Instructions
Handling and Storage:
- Store the device in a dry environment to prevent moisture damage.
- Handle with care to avoid mechanical stress or damage to the leads.
Mounting:
- Ensure proper heat sinking if operating at high power levels to maintain junction temperature within specified limits.
- Use appropriate mounting hardware to secure the device to the heatsink.
Biasing:
- Apply gate-source voltage (VGS) within the specified range to ensure reliable operation.
- Avoid exceeding the maximum gate-source voltage to prevent gate oxide breakdown.
Current Limiting:
- Ensure that the drain current (ID) does not exceed the maximum continuous or pulse ratings.
- Use external current limiting resistors if necessary to protect the device.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it stays within the operational range.
- Use thermal paste between the device and heatsink to improve heat transfer.
Electrostatic Discharge (ESD) Protection:
- Handle the device with ESD-protected equipment to prevent damage from static electricity.
- Store the device in ESD-protective packaging when not in use.
Pulse Operation:
- For pulse applications, ensure that the pulse duration and frequency do not exceed the specified limits to avoid overheating or damage.
Testing:
- Use appropriate test equipment and procedures to verify the device parameters and performance.
- Follow safety guidelines when testing high-voltage or high-current circuits.
By adhering to these specifications and instructions, you can ensure reliable and efficient operation of the 2N5876 N-Channel MOSFET.
(For reference only)Inquiry - 2N5876
