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PM150CVA120

Specifications

SKU: 280731

BUY PM150CVA120 https://www.utsource.net/itm/p/280731.html
FLAT-BASE TYPE INSULATED PACKAGE
Parameter Value Unit
Part Number PM150CVA120 -
Type MOSFET -
Package TO-247-3L -
Maximum Drain Current 150 A
Maximum Drain-Source Voltage (VDS) 1200 V
Maximum Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current 150 A
RDS(on) at 10V VGS 1.5
Power Dissipation 2800 W
Junction Temperature -55 to +175 °C
Storage Temperature -65 to +150 °C
Thermal Resistance (RθJC) 0.5 °C/W

Instructions for Use:

  1. Handling Precautions:

    • Handle with care to avoid mechanical damage.
    • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure the heatsink is properly attached to dissipate heat effectively.
    • Torque the mounting screws to the recommended specifications to avoid over-tightening or under-tightening.
  3. Electrical Connections:

    • Connect the drain, source, and gate terminals correctly as per the circuit diagram.
    • Use suitable wire gauges to handle the current ratings.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for voltage, current, and temperature.
    • Monitor the junction temperature to ensure it remains within safe operating limits.
  5. Testing:

    • Perform initial testing at low power levels to verify correct operation.
    • Gradually increase power levels while monitoring performance and temperature.
  6. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Avoid exposure to extreme temperatures and direct sunlight.
  7. Troubleshooting:

    • If the device fails, check for short circuits, overvoltage conditions, or overheating.
    • Replace any damaged components and retest the circuit.
(For reference only)

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