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BUZ384

Specifications

SKU: 323903

BUY BUZ384 https://www.utsource.net/itm/p/323903.html
MOSFET Transistor, N-Channel, TO-218AA
Parameter Symbol Min Typical Max Unit
Breakdown Voltage VBR - 36 42 V
Leakage Current IR - 100 - nA (at VBR)
Capacitance C - 550 - pF (at 1 MHz)
Reverse Recovery Time trr - 75 - ns
Operating Temperature Toper -40 - 150 °C
Storage Temperature Tstg -65 - 150 °C

Instructions for Use:

  1. Handling:

    • Handle the BUZ384 with care to avoid damage to the leads and body.
    • Use appropriate ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
  2. Mounting:

    • Ensure proper alignment of the component during soldering to avoid mechanical stress.
    • Use a soldering iron with a temperature not exceeding 300°C for a duration not exceeding 10 seconds per connection.
  3. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Ensure the operating temperature is within the specified range to avoid thermal damage.
  4. Storage:

    • Store the BUZ384 in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the components in their original packaging until ready for use to protect against moisture and physical damage.
  5. Testing:

    • Use a high-impedance voltmeter to measure the breakdown voltage.
    • Ensure the leakage current is measured at the specified breakdown voltage to ensure accuracy.
  6. Applications:

    • The BUZ384 is suitable for general-purpose protection circuits, transient voltage suppression, and clamping applications.
    • It can be used in circuits where fast response times and low capacitance are required.
(For reference only)

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