Specifications
SKU: 323903
MOSFET Transistor, N-Channel, TO-218AA
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Breakdown Voltage | VBR | - | 36 | 42 | V |
Leakage Current | IR | - | 100 | - | nA (at VBR) |
Capacitance | C | - | 550 | - | pF (at 1 MHz) |
Reverse Recovery Time | trr | - | 75 | - | ns |
Operating Temperature | Toper | -40 | - | 150 | °C |
Storage Temperature | Tstg | -65 | - | 150 | °C |
Instructions for Use:
Handling:
- Handle the BUZ384 with care to avoid damage to the leads and body.
- Use appropriate ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
Mounting:
- Ensure proper alignment of the component during soldering to avoid mechanical stress.
- Use a soldering iron with a temperature not exceeding 300°C for a duration not exceeding 10 seconds per connection.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Ensure the operating temperature is within the specified range to avoid thermal damage.
Storage:
- Store the BUZ384 in a dry, cool place away from direct sunlight and sources of heat.
- Keep the components in their original packaging until ready for use to protect against moisture and physical damage.
Testing:
- Use a high-impedance voltmeter to measure the breakdown voltage.
- Ensure the leakage current is measured at the specified breakdown voltage to ensure accuracy.
Applications:
- The BUZ384 is suitable for general-purpose protection circuits, transient voltage suppression, and clamping applications.
- It can be used in circuits where fast response times and low capacitance are required.
Inquiry - BUZ384