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2SA1051A

Specifications

SKU: 377371

BUY 2SA1051A https://www.utsource.net/itm/p/377371.html
Shortform Data and Cross References (Misc Datasheets)
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 45 V
Emitter-Collector Voltage VECS - - 45 V
Base-Emitter Voltage VBE - 1.2 1.8 V
Collector Current IC - - 150 mA
Base Current IB - - 15 mA
Power Dissipation PT - - 625 mW
Operating Temperature TA -55 - 150 °C
Storage Temperature TSTG -65 - 200 °C

Instructions for Use:

  1. Handling Care: The 2SA1051A is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
  2. Mounting: Ensure proper mounting to maintain thermal performance. Use a heatsink if necessary to dissipate heat, especially when operating at high power levels.
  3. Biasing: Proper biasing is crucial for stable operation. Ensure that the base current (IB) is sufficient to drive the transistor into saturation but not so high as to cause excessive power dissipation.
  4. Voltage Ratings: Do not exceed the maximum ratings for collector-emitter voltage (VCEO), emitter-collector voltage (VECS), and base-emitter voltage (VBE). Exceeding these values can lead to device failure.
  5. Current Limits: Stay within the specified collector current (IC) and base current (IB) limits to avoid damage.
  6. Thermal Management: Monitor the junction temperature to ensure it remains within the operating range. High temperatures can reduce the lifespan of the transistor.
  7. Storage: Store the 2SA1051A in a dry, cool environment to prevent moisture damage. Follow the storage temperature guidelines to avoid degradation.
  8. Testing: Before final assembly, test the transistor to ensure it meets the specified parameters. This helps in identifying any potential issues early in the process.
(For reference only)

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