Specifications
SKU: 379685
POWER FIELD EFFECT TRANSISTOR
Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDSS | 500 | V | |||
Gate-Source Voltage | VGS | -10 | 20 | V | ||
Continuous Drain Current | ID | VDS = 25V, Tc = 25°C | 4.0 | A | ||
Pulse Drain Current | Ipp | t = 10ms, Tc = 25°C | 12 | A | ||
Gate Charge | Qg | VGS = 15V | 90 | nC | ||
Input Capacitance | Ciss | VDS = 25V | 1800 | pF | ||
Output Capacitance | Coss | VDS = 25V | 600 | pF | ||
Reverse Transfer Capacitance | Crss | VDS = 25V | 350 | pF | ||
Total Switching Energy | Esw | VDS = 400V, ID = 4A, f = 100kHz | 700 | nJ | ||
On-State Resistance | RDS(on) | VGS = 10V, ID = 4A | 0.18 | Ω |
Instructions for Use:
Handling Precautions:
- Avoid exposing the device to excessive mechanical stress.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure that the device is mounted on a suitable heatsink if high power dissipation is expected.
- Use thermal paste to enhance heat transfer between the device and the heatsink.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Ensure that the gate-source voltage (VGS) is within the recommended range to avoid damage to the gate oxide.
Thermal Management:
- Monitor the junction temperature (Tj) to ensure it does not exceed the maximum allowable value.
- Consider derating the current if operating at higher temperatures.
Gate Drive:
- Use a gate resistor to control the switching speed and reduce ringing.
- Ensure the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
Storage:
- Store the device in a dry, cool place away from direct sunlight.
- Follow the storage conditions specified by the manufacturer to maintain device reliability.
Testing:
- Use appropriate test equipment and methods to verify the device parameters.
- Refer to the datasheet for specific test conditions and procedures.
Applications:
- The MTM4N50 is suitable for applications such as power supplies, motor control, and switching circuits where high efficiency and low on-state resistance are required.
Inquiry - MTM4N50