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Specifications
SKU: 381428
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(DS) | -50 | 50 | V | ||
| Gate-Source Voltage | V(GS) | -10 | 10 | V | ||
| Continuous Drain Current | I(D) | 2 | 2.5 | A | Tc = 25°C | |
| Pulse Drain Current | I(DM) | 8 | A | t = 10 μs, Duty Cycle ≤ 1% | ||
| Gate Charge | Q(G) | 60 | nC | V(GS) = ±10V, V(DS) = 25V | ||
| Input Capacitance | Ciss | 240 | pF | f = 1 MHz, V(DS) = 0V | ||
| Output Capacitance | Coss | 140 | pF | f = 1 MHz, V(DS) = 0V | ||
| Reverse Transfer Capacitance | Crss | 80 | pF | f = 1 MHz, V(DS) = 0V | ||
| Threshold Voltage | Vth | 2 | 3 | 4 | V | I(D) = 250 μA, Tc = 25°C |
| On-State Resistance | R(DS(on)) | 0.5 | 0.7 | 1 | Ω | V(GS) = 10V, I(D) = 2A, Tc = 25°C |
| Total Power Dissipation | P(TOT) | 60 | W | Tc = 25°C |
Instructions for Use:
Handling Precautions:
- Avoid exposing the device to voltages or currents exceeding the maximum ratings.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure good thermal management by using a heatsink if necessary.
- Follow recommended PCB layout guidelines to minimize parasitic inductances and capacitances.
Biasing:
- Apply gate voltage carefully to avoid exceeding the threshold voltage range.
- Use appropriate gate drive circuits to ensure fast switching and reduce switching losses.
Operation:
- Operate within the specified temperature range to ensure reliable performance.
- Monitor the junction temperature to prevent overheating.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep the device in its original packaging until ready for use to protect against moisture and static damage.
Testing:
- Use a calibrated test setup to verify the parameters of the device.
- Follow the test conditions specified in the parameter table for accurate measurements.
Inquiry - 2SK3324
