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2SJ222

Specifications

SKU: 381715

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Silicon P Channel MOS FETPMOSFET
2SJ222 is a P-channel MOSFET manufactured by Hitachi. It is housed in a TO-220 package. Description: The 2SJ222 is a P-channel MOSFET with a drain-source voltage (VDS) of -20V and a drain current (ID) of -1.3A. It has a low on-resistance of 0.065Ω and a fast switching speed. Features: Low on-resistance (RDS(on)) Fast switching speed High voltage (VDS) Low gate charge (Qg) Low input capacitance (Ciss) Applications: The 2SJ222 is suitable for use in switching applications such as DC-DC converters, power supplies, motor control, and other power management applications. (For reference only)

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