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Specifications
SKU: 382868
Silicon PNP Triple DiffusedPNP
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCE | 500 | V |
| Emitter-Base Voltage | VEB | 5 | V |
| Collector Current | IC | 15 | A |
| Power Dissipation | PT | 125 | W |
| Storage Temperature | TSTG | -55 to +150 | °C |
| Operating Junction Temperature | TJ | -55 to +150 | °C |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.8 (max) | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.2 (max) | V |
| Transition Frequency | fT | 3 | MHz |
| Maximum Storage Time | tST | 168 | hours |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to manage the high power dissipation.
- Use insulated mounting hardware to avoid electrical shorts.
Biasing:
- Apply the base-emitter voltage (VBE) carefully to avoid exceeding the maximum rating.
- Ensure the collector current (IC) does not exceed 15A to prevent damage.
Temperature Management:
- Operate within the specified junction temperature range (-55°C to +150°C).
- Monitor the temperature during operation to prevent overheating.
Storage:
- Store the device in a dry, cool place within the storage temperature range (-55°C to +150°C).
- Avoid prolonged exposure to extreme temperatures or humidity.
Handling:
- Handle with care to avoid mechanical stress on the leads.
- Use appropriate ESD protection to prevent damage from static electricity.
Testing:
- Use a suitable testing setup to measure parameters like VCE(sat) and VBE(sat).
- Follow safety guidelines to ensure safe operation during testing.
Inquiry - 2SB1494
