BUY IRG4PC40KD https://www.utsource.net/itm/p/382874.html
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEVces=600V, Vceontyp.=2.1V, @Vge=15V, Ic=25A
Description: This is an insulated gate bipolar transistor (IGBT) manufactured by International Rectifier. It is a high voltage, high speed device with a maximum collector-emitter voltage of 600V and a maximum collector current of 40A. Features: High speed switching Low saturation voltage Low gate charge Low on-state resistance High surge current capability High temperature operation Low thermal resistance Applications: This IGBT is suitable for use in high power switching applications such as motor control, UPS systems, power supplies, and inverters. It can also be used in high voltage, high frequency applications such as welding and plasma cutting. (For reference only)