Specifications
SKU: 383143
N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | IC = 0, TJ = 25°C | - | - | 60 | V |
Collector-Base Voltage | VCB | IC = 0, TJ = 25°C | - | - | 60 | V |
Emitter-Base Voltage | VEB | IE = 100 mA, TJ = 25°C | -2 | - | - | V |
Continuous Collector Current | IC | TC = 25°C, TJ = 150°C | - | 20 | - | A |
Continuous Collector Dissipation | PTOT | TC = 25°C | - | - | 110 | W |
Junction Temperature | TJ | - | - | - | 150 | °C |
Storage Temperature Range | TSTG | - | -55 | - | 150 | °C |
Instructions for Using STP20NE06:
Handling Precautions:
- ESD Sensitivity: The STP20NE06 is sensitive to electrostatic discharge (ESD). Use proper ESD protection equipment and follow ESD handling procedures.
- Thermal Management: Ensure adequate heat sinking to manage the power dissipation and keep the junction temperature within safe limits.
Mounting:
- Surface Mount Technology (SMT): Follow the recommended soldering profile for SMT components to avoid thermal stress.
- Through-Hole Mounting: Ensure that the leads are properly aligned and soldered to avoid mechanical stress on the device.
Operating Conditions:
- Voltage Ratings: Do not exceed the maximum ratings for VCE, VCB, and VEB. Exceeding these values can cause permanent damage.
- Current Ratings: Ensure that the continuous collector current (IC) does not exceed 20A at the specified conditions. Use appropriate heatsinks to manage power dissipation.
- Temperature Limits: Keep the junction temperature (TJ) below 150°C to prevent thermal runaway and potential failure.
Testing:
- Parameter Verification: Verify the parameters such as VCE(sat), hFE, and VBE(sat) under the specified test conditions to ensure the device meets the required specifications.
- Functional Testing: Perform functional testing under actual operating conditions to validate the performance and reliability of the device.
Storage:
- Temperature Range: Store the device in a dry environment within the storage temperature range of -55°C to 150°C.
- Humidity Control: Avoid exposure to high humidity levels to prevent moisture-related issues.
Design Considerations:
- Heat Sink Design: Design the heat sink to effectively dissipate the heat generated by the device, especially in high-power applications.
- Circuit Protection: Implement appropriate circuit protection measures such as overcurrent and overvoltage protection to safeguard the device from transient conditions.
Datasheet Reference:
- Always refer to the latest datasheet from STMicroelectronics for the most accurate and up-to-date information.
Inquiry - STP20NE06