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STP20NE06

Specifications

SKU: 383143

BUY STP20NE06 https://www.utsource.net/itm/p/383143.html
N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Voltage VCE IC = 0, TJ = 25°C - - 60 V
Collector-Base Voltage VCB IC = 0, TJ = 25°C - - 60 V
Emitter-Base Voltage VEB IE = 100 mA, TJ = 25°C -2 - - V
Continuous Collector Current IC TC = 25°C, TJ = 150°C - 20 - A
Continuous Collector Dissipation PTOT TC = 25°C - - 110 W
Junction Temperature TJ - - - 150 °C
Storage Temperature Range TSTG - -55 - 150 °C

Instructions for Using STP20NE06:

  1. Handling Precautions:

    • ESD Sensitivity: The STP20NE06 is sensitive to electrostatic discharge (ESD). Use proper ESD protection equipment and follow ESD handling procedures.
    • Thermal Management: Ensure adequate heat sinking to manage the power dissipation and keep the junction temperature within safe limits.
  2. Mounting:

    • Surface Mount Technology (SMT): Follow the recommended soldering profile for SMT components to avoid thermal stress.
    • Through-Hole Mounting: Ensure that the leads are properly aligned and soldered to avoid mechanical stress on the device.
  3. Operating Conditions:

    • Voltage Ratings: Do not exceed the maximum ratings for VCE, VCB, and VEB. Exceeding these values can cause permanent damage.
    • Current Ratings: Ensure that the continuous collector current (IC) does not exceed 20A at the specified conditions. Use appropriate heatsinks to manage power dissipation.
    • Temperature Limits: Keep the junction temperature (TJ) below 150°C to prevent thermal runaway and potential failure.
  4. Testing:

    • Parameter Verification: Verify the parameters such as VCE(sat), hFE, and VBE(sat) under the specified test conditions to ensure the device meets the required specifications.
    • Functional Testing: Perform functional testing under actual operating conditions to validate the performance and reliability of the device.
  5. Storage:

    • Temperature Range: Store the device in a dry environment within the storage temperature range of -55°C to 150°C.
    • Humidity Control: Avoid exposure to high humidity levels to prevent moisture-related issues.
  6. Design Considerations:

    • Heat Sink Design: Design the heat sink to effectively dissipate the heat generated by the device, especially in high-power applications.
    • Circuit Protection: Implement appropriate circuit protection measures such as overcurrent and overvoltage protection to safeguard the device from transient conditions.
  7. Datasheet Reference:

    • Always refer to the latest datasheet from STMicroelectronics for the most accurate and up-to-date information.
(For reference only)

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