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Specifications
SKU: 383356
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 60 | - | V | |
| Gate-Source Voltage | VGS | -10 | - | 20 | V | |
| Continuous Drain Current | ID | - | 15 | - | A | TC = 25°C |
| Pulse Drain Current | ID(p) | - | 30 | - | A | TC = 25°C, tp = 10 μs |
| Power Dissipation | PTOT | - | - | 115 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature | TSTG | -55 | - | 150 | °C | |
| Total Gate Charge | QG | - | 37 | - | nC | VGS = 10V |
| Input Capacitance | Ciss | - | 1000 | - | pF | VDS = 25V |
| Output Capacitance | Coss | - | 170 | - | pF | VDS = 25V |
| Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.5 | V | ID = 250 μA |
| On-State Resistance | RDS(on) | - | 0.044 | - | Ω | VGS = 10V, ID = 15A |
Instructions for Use:
Handling Precautions:
- The MTP15N06E is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection when handling.
- Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.
Mounting:
- Ensure proper heat sinking to manage power dissipation, especially under high current conditions.
- Use a thermal interface material (TIM) between the device and the heatsink for better thermal conductivity.
Gate Drive:
- Apply a gate-source voltage (VGS) within the specified range to ensure reliable operation.
- For optimal performance, use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
- Consider derating the drain current (ID) if operating at higher ambient temperatures.
Storage:
- Store the device in a dry, cool environment within the storage temperature range (-55°C to 150°C).
- Protect from moisture and physical damage during storage and transportation.
Testing:
- Use appropriate test equipment and methods to verify the parameters and functionality of the device.
- Follow industry standards and guidelines for testing MOSFETs to ensure accurate results.
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