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Specifications
SKU: 383378
LASER MODULE 635NM 4.2MW MVP
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -10 | - | 100 | V | Maximum drain-to-source voltage |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | Maximum gate-to-source voltage |
| Continuous Drain Current | ID | - | - | 27 | A | Maximum continuous drain current at 25°C |
| Pulse Drain Current | IDM | - | - | 54 | A | Maximum pulse drain current (t = 10 ms) |
| Power Dissipation | PD | - | - | 130 | W | Maximum power dissipation at 25°C |
| Junction Temperature | TJ | -55 | - | 150 | °C | Operating junction temperature range |
| Storage Temperature | TSTG | -65 | - | 150 | °C | Storage temperature range |
| Total Gate Charge | QG | - | 70 | - | nC | Total gate charge |
| Input Capacitance | Ciss | - | 1300 | - | pF | Input capacitance at VGS = 10V, VDS = 10V |
| Output Capacitance | Coss | - | 280 | - | pF | Output capacitance at VGS = 0V, VDS = 10V |
| Reverse Transfer Capacitance | Crss | - | 200 | - | pF | Reverse transfer capacitance at VGS = 0V, VDS = 10V |
| RDS(on) at VGS = 10V | RDS(on) | - | 0.035 | - | Ω | On-state resistance at VGS = 10V |
| RDS(on) at VGS = 4.5V | RDS(on) | - | 0.055 | - | Ω | On-state resistance at VGS = 4.5V |
| Threshold Voltage | VGS(th) | 2 | 4 | 6 | V | Gate threshold voltage |
Instructions for Use:
Operating Conditions:
- Ensure that the drain-source voltage (VDS) does not exceed 100V.
- The gate-source voltage (VGS) should be kept within ±20V.
- The continuous drain current (ID) should not exceed 27A at 25°C ambient temperature.
- For pulse conditions, the drain current (IDM) can reach up to 54A for a duration of 10 ms.
Thermal Management:
- The maximum power dissipation (PD) is 130W at 25°C. Proper heat sinking is required to manage power dissipation at higher temperatures.
- The operating junction temperature (TJ) should be between -55°C and 150°C.
- Store the device in a temperature range of -65°C to 150°C.
Electrical Characteristics:
- The on-state resistance (RDS(on)) is 0.035Ω at VGS = 10V and 0.055Ω at VGS = 4.5V.
- The total gate charge (QG) is 70 nC.
- Capacitances (Ciss, Coss, Crss) are provided for circuit design considerations.
Handling and Storage:
- Handle the device with care to avoid damage to the leads and body.
- Store in a dry, cool place within the specified storage temperature range.
Mounting:
- Ensure proper mounting to a heatsink to maintain thermal performance.
- Follow recommended soldering profiles to avoid thermal stress during assembly.
Testing:
- Test the device under controlled conditions to verify its parameters and performance.
- Use appropriate test equipment and methods to measure electrical characteristics accurately.
Inquiry - MTP27N10E
