BUY MG50J2YS45 https://www.utsource.net/itm/p/386497.html
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG50J2YS45 is a 50A, 600V, three-phase IGBT Module manufactured by Toshiba America Electronic Components. Features: Low switching loss High speed switching Low noise High reliability High surge current capability Low inductance Low thermal resistance Application: The MG50J2YS45 is suitable for use in motor control, inverter, UPS, welding, and other industrial applications. (For reference only)