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MG75Q1BS11

Specifications

SKU: 386505

BUY MG75Q1BS11 https://www.utsource.net/itm/p/386505.html
Silicon N channel IGBTN
Parameter Description Value Unit
Part Number Component Identifier MG75Q1BS11 -
Type Component Type MOSFET -
VDS Drain-Source Voltage 75 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current 11 A
RDS(on) On-State Resistance at VGS = 10V 1.6
PTOT Total Power Dissipation 110 W
TJ Junction Temperature Range -55 to +175 °C
Package Encapsulation TO-247-3L -
Mounting Type Installation Method Through-Hole -

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid mechanical damage.
    • Use ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
  2. Soldering:

    • Soldering temperature should not exceed 260°C.
    • Ensure that the soldering time does not exceed 10 seconds per connection.
  3. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Keep away from direct sunlight and sources of heat.
  4. Mounting:

    • Ensure proper alignment of the device during installation to avoid misalignment and potential damage.
    • Use appropriate mounting hardware and torque specifications to secure the device.
  5. Operating Conditions:

    • Do not exceed the maximum ratings specified in the parameter table.
    • Ensure adequate heat sinking to manage power dissipation and maintain junction temperature within the specified range.
  6. Testing:

    • Use appropriate test equipment and methods to verify the functionality of the device.
    • Follow safety guidelines to prevent electrical shock and damage to the device.
  7. Application:

    • This device is suitable for high-power switching applications such as motor control, power supplies, and inverters.
    • Refer to the datasheet for detailed application notes and circuit diagrams.
(For reference only)

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