Specifications
SKU: 386505
Silicon N channel IGBTN
Parameter | Description | Value | Unit |
---|---|---|---|
Part Number | Component Identifier | MG75Q1BS11 | - |
Type | Component Type | MOSFET | - |
VDS | Drain-Source Voltage | 75 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID | Continuous Drain Current | 11 | A |
RDS(on) | On-State Resistance at VGS = 10V | 1.6 | mΩ |
PTOT | Total Power Dissipation | 110 | W |
TJ | Junction Temperature Range | -55 to +175 | °C |
Package | Encapsulation | TO-247-3L | - |
Mounting Type | Installation Method | Through-Hole | - |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid mechanical damage.
- Use ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
Soldering:
- Soldering temperature should not exceed 260°C.
- Ensure that the soldering time does not exceed 10 seconds per connection.
Storage:
- Store in a dry, cool place to prevent moisture damage.
- Keep away from direct sunlight and sources of heat.
Mounting:
- Ensure proper alignment of the device during installation to avoid misalignment and potential damage.
- Use appropriate mounting hardware and torque specifications to secure the device.
Operating Conditions:
- Do not exceed the maximum ratings specified in the parameter table.
- Ensure adequate heat sinking to manage power dissipation and maintain junction temperature within the specified range.
Testing:
- Use appropriate test equipment and methods to verify the functionality of the device.
- Follow safety guidelines to prevent electrical shock and damage to the device.
Application:
- This device is suitable for high-power switching applications such as motor control, power supplies, and inverters.
- Refer to the datasheet for detailed application notes and circuit diagrams.
Inquiry - MG75Q1BS11