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Specifications
SKU: 415285
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
Below is the parameter table and instructions for the DDB6U100N16RR, a high-voltage MOSFET.
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 1600 | V | |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | |
| Continuous Drain Current | ID | - | - | 100 | A | TC = 25°C |
| Continuous Drain Current | ID | - | - | 60 | A | TC = 100°C |
| Pulse Drain Current (10 μs) | IDM | - | - | 300 | A | TC = 25°C |
| Power Dissipation | PTOT | - | - | 1400 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | |
| Storage Temperature Range | TSTG | -55 | - | 175 | °C | |
| Gate Charge | QG | - | 120 | - | nC | VGS = 15V, ID = 10A |
| Input Capacitance | Ciss | - | 2800 | - | pF | VDS = 600V, f = 1MHz |
| Output Capacitance | Coss | - | 230 | - | pF | VDS = 600V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 120 | - | pF | VDS = 600V, f = 1MHz |
| On-State Resistance | RDS(on) | - | 0.065 | - | Ω | VGS = 15V, ID = 10A |
| Threshold Voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | ID = 1mA |
| Maximum Gate Current | IG | - | - | 10 | A |
Instructions
Handling and Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Handle the device with care to avoid mechanical stress and static discharge.
- Use proper ESD protection when handling the device.
Mounting:
- Ensure that the mounting surface is clean and flat.
- Apply thermal paste or a thermal pad between the device and the heat sink to improve thermal conductivity.
- Tighten the mounting screws to the recommended torque to ensure good thermal contact without causing mechanical stress.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to avoid damage.
- Use a gate resistor to limit the gate current and prevent oscillations.
Operation:
- Do not exceed the maximum drain-source voltage (VDS) to prevent breakdown.
- Ensure that the continuous drain current (ID) does not exceed the rated value at the given case temperature (TC).
- For pulse operation, ensure that the pulse drain current (IDM) is within the specified limit and that the pulse width is within the allowed duration.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
- Use a suitable heat sink to dissipate the power dissipation (PTOT) effectively.
Testing:
- Test the device under controlled conditions to verify its performance.
- Use appropriate test equipment and follow safety guidelines to prevent damage to the device and personnel.
By following these parameters and instructions, you can ensure reliable and safe operation of the DDB6U100N16RR MOSFET.
(For reference only)Inquiry - DDB6U100N16RR
