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Specifications
SKU: 422378
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
| Parameter | Description | Value |
|---|---|---|
| Device Type | 256K x 16 CMOS Low Voltage Static RAM | - |
| Supply Voltage (VCC) | Operating Supply Voltage | 3.3V ± 0.3V |
| Standby Current (ISB) | Supply Current in Standby Mode | 5 μA (max) at VCC = 3.3V, TA = 25°C |
| Active Current (ICC) | Supply Current in Active Mode | 40 mA (max) at VCC = 3.3V, fCLK = 100 MHz, TA = 25°C |
| Access Time (tAC) | Access Time from Address to Data Valid | 10 ns (max) at VCC = 3.3V, fCLK = 100 MHz, TA = 25°C |
| Output Enable Time (tOE) | Output Enable to Data Valid | 10 ns (max) at VCC = 3.3V, fCLK = 100 MHz, TA = 25°C |
| Data Hold Time (tDH) | Data Hold Time after Address Change | 0 ns (min) at VCC = 3.3V, fCLK = 100 MHz, TA = 25°C |
| Write Cycle Time (tCYW) | Write Cycle Time | 15 ns (max) at VCC = 3.3V, fCLK = 100 MHz, TA = 25°C |
| Output Disable Time (tOHZ) | Output Disable to High-Z State | 10 ns (max) at VCC = 3.3V, fCLK = 100 MHz, TA = 25°C |
| Operating Temperature Range (TA) | Ambient Operating Temperature | -40°C to +85°C |
| Storage Temperature Range (TSTG) | Storage Temperature | -65°C to +150°C |
| Package Type | Package | TQFP-44 (10 mm x 10 mm) |
Instructions for Use:
Power Supply:
- Ensure that the supply voltage (VCC) is within the specified range of 3.0V to 3.6V.
- Use appropriate decoupling capacitors (e.g., 0.1 μF ceramic capacitors) placed close to the power pins to minimize noise.
Address and Data Lines:
- Connect the address lines (A0-A17) to the microcontroller or memory controller.
- Connect the data lines (DQ0-DQ15) to the corresponding data lines of the system.
Control Signals:
- Chip Select (CS#): Active low signal to enable the device.
- Output Enable (OE#): Active low signal to enable data output.
- Write Enable (WE#): Active low signal to initiate a write operation.
- Write Protect (WP#): Active low signal to prevent accidental writes (optional).
Timing Considerations:
- Ensure that all timing parameters, such as access time (tAC), output enable time (tOE), and write cycle time (tCYW), are met to avoid data corruption.
- Use a clock frequency that is compatible with the maximum operating frequency of the device (100 MHz).
Handling and Storage:
- Handle the device with care to avoid electrostatic discharge (ESD) damage.
- Store the device in a dry environment within the specified storage temperature range.
Testing and Verification:
- Perform initial testing at room temperature to verify functionality.
- Conduct additional tests at the full operating temperature range to ensure reliability.
Layout Considerations:
- Place the device close to the memory controller to minimize trace lengths and reduce signal degradation.
- Use ground planes and power planes to improve signal integrity and reduce noise.
Documentation:
- Refer to the datasheet for detailed information on pin configurations, electrical characteristics, and mechanical dimensions.
Inquiry - IS61LV25616AL-10TI
