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FM24C64-P

Specifications

SKU: 443587

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IC 64K SERIAL FRAM
Parameter Description Value Unit
Device Type Non-Volatile Memory 64 Kbit (8 K x 8) -
Operating Voltage Supply Voltage Range 1.7 to 5.5 V
Operating Temperature Industrial Temperature Range -40 to +85 °C
Data Retention Data Retention at 25°C 200 Years
Write Cycles Endurance 1,000,000 Cycles
Access Time Typical Access Time 5 μs
Standby Current Maximum Standby Current 1 μA
Active Current Maximum Active Current 3 mA
Package Package Type 8-pin SOIC, 8-pin TSSOP -
Communication Interface I2C Interface Standard Mode (100 kHz), Fast Mode (400 kHz) -
Write Protection Hardware Write Protect Pin (WP) -
Memory Organization Memory Configuration 8K x 8 -

Instructions for Use

  1. Power Supply:

    • Connect the VCC pin to the power supply within the specified voltage range (1.7V to 5.5V).
    • Connect the GND pin to the ground.
  2. I2C Communication:

    • Connect the SDA (Serial Data) and SCL (Serial Clock) pins to the corresponding I2C lines on your microcontroller.
    • Ensure pull-up resistors are connected to the SDA and SCL lines to VCC. Typical values are 4.7kΩ to 10kΩ.
  3. Write Protection:

    • To enable write protection, connect the WP (Write Protect) pin to VCC.
    • To disable write protection, connect the WP pin to GND or leave it floating.
  4. Addressing:

    • The device has a 7-bit I2C address, which can be configured using the A0, A1, and A2 pins. Refer to the datasheet for specific address configurations.
  5. Reading Data:

    • Initiate a start condition on the I2C bus.
    • Send the device address with the read bit set.
    • Read the desired number of bytes from the memory.
    • Send a stop condition to end the read operation.
  6. Writing Data:

    • Initiate a start condition on the I2C bus.
    • Send the device address with the write bit set.
    • Send the memory address where data will be written.
    • Send the data to be written.
    • Send a stop condition to end the write operation.
    • Wait for the write cycle to complete before initiating another write operation. This typically takes 5 μs.
  7. Data Retention:

    • Ensure that the device is not exposed to excessive heat or radiation to maintain data retention over the specified period.
  8. Handling:

    • Handle the device with care to avoid static damage. Use proper ESD precautions.
  9. Storage:

    • Store the device in a dry, cool place to ensure long-term reliability.

For detailed timing diagrams and advanced features, refer to the FM24C64-P datasheet provided by the manufacturer.

(For reference only)

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