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Specifications
SKU: 459237
8mx16 Sdram 54csp
Below is the parameter table and instructions for the K4S281632E-TC75, a 256Mbit (32M x 8) SDRAM (Synchronous Dynamic Random Access Memory).
K4S281632E-TC75 Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Supply Voltage | VCC | 2.4 | 2.5 | 2.6 | V | |
| I/O Voltage | VCCIO | 2.4 | 2.5 | 2.6 | V | |
| Standby Current | Icc2 | - | 0.1 | 0.2 | mA | VCC = 2.5V, No refresh |
| Active Current | Icc1 | - | 200 | 300 | mA | VCC = 2.5V, 100 MHz, 100% duty |
| Refresh Current | Icc6 | - | 20 | 30 | mA | VCC = 2.5V, 100 MHz, 8K refresh |
| Access Time from CLK | tAC | 5.0 | - | 7.5 | ns | VCC = 2.5V, Ta = 25°C |
| Row Address Strobe | tRAS | 45 | - | 75 | ns | VCC = 2.5V, Ta = 25°C |
| Row Precharge Time | tRP | 15 | - | 25 | ns | VCC = 2.5V, Ta = 25°C |
| Row Active to Read/Write | tRCD | 15 | - | 25 | ns | VCC = 2.5V, Ta = 25°C |
| Column Address Strobe | tCL | 2 | 3 | 4 | clocks | VCC = 2.5V, Ta = 25°C |
| Write Recovery Time | tWR | 10 | - | 15 | ns | VCC = 2.5V, Ta = 25°C |
| Data Output Hold Time | tOH | 1.5 | - | 2.5 | ns | VCC = 2.5V, Ta = 25°C |
| Data Output Enable Time | tOE | 2.0 | - | 4.0 | ns | VCC = 2.5V, Ta = 25°C |
| Cycle Time | tRC | 60 | - | 90 | ns | VCC = 2.5V, Ta = 25°C |
| Minimum Clock Period | tCK | 7.5 | - | 10.0 | ns | VCC = 2.5V, Ta = 25°C |
| Maximum Clock Frequency | fMAX | - | 133 | 150 | MHz | VCC = 2.5V, Ta = 25°C |
Instructions for K4S281632E-TC75
Power Supply:
- Ensure that both VCC and VCCIO are within the specified range (2.4V to 2.6V).
- Use decoupling capacitors (0.1μF and 10μF) close to the power supply pins to minimize noise.
Initialization:
- After power-up, perform a reset by holding the CKE (Clock Enable) low for at least 200ns.
- Perform a mode register set (MRS) command to configure the SDRAM.
- Set the mode register to the desired operating mode (e.g., burst length, CAS latency).
Refresh:
- The SDRAM requires periodic refresh cycles to maintain data integrity.
- Perform an auto-refresh (REF) command every 64ms (8K refresh cycles).
Memory Operations:
- Row Activation: Use the ACT (Active) command to open a row for access.
- Read/Write: After activating a row, use the READ or WRITE commands to access data.
- Precharge: Use the PRE (Precharge) command to close the row after operations are complete.
- Burst Mode: Configure the burst length and type in the mode register to optimize data transfer.
Timing:
- Ensure that all timing parameters (tAC, tRAS, tRP, tRCD, tCL, tWR, tOH, tOE, tRC, tCK) are met to avoid data corruption and ensure reliable operation.
- Use a clock signal with a frequency within the specified range (133MHz to 150MHz).
Power Management:
- To enter self-refresh mode, set the CKE high and then low while maintaining the clock.
- To exit self-refresh, set the CKE high again and wait for the exit time before performing any other operations.
Testing and Debugging:
- Use boundary scan (JTAG) for testing and debugging if supported.
- Verify signal integrity and timing using an oscilloscope or logic analyzer.
By following these instructions and ensuring that all parameters are within the specified limits, you can achieve optimal performance and reliability with the K4S281632E-TC75 SDRAM.
(For reference only)Inquiry - K4S281632E-TC75
