BUY K4S281632F-TC75 https://www.utsource.net/itm/p/459241.html
128Mb F-die SDRAM Specification
Description: 4M x 16Bit x 4 Banks Synchronous DRAM Features: - Fast access time: 10ns - Low power consumption - 4M x 16Bit x 4 Banks - Programmable burst lengths: 1, 2, 4, 8 - Programmable burst type: Sequential and Interleave - Auto & Self Refresh - Programmable CAS Latency: 2, 2.5, 3 - Programmable RAS# to CAS# delay - Programmable write recovery time - Programmable row precharge time - Programmable row active time - Programmable write CAS latency - Programmable output driver strength Application: - Networking - Graphics - Video - Imaging - Industrial Control - Automotive (For reference only)