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Specifications
SKU: 490994
NSC810A RAM -I/O - TIMER
| Parameter | Description | Value |
|---|---|---|
| Part Number | NSC810AN-4I | |
| Type | N-Channel MOSFET | |
| Package | TO-252 (DPAK) | |
| VDS (Max) | Drain-to-Source Voltage | 60 V |
| VGS (Max) | Gate-to-Source Voltage | ±20 V |
| RDS(on) | On-State Resistance at VGS = 4.5 V | 35 mΩ |
| RDS(on) | On-State Resistance at VGS = 10 V | 25 mΩ |
| ID (Max) | Continuous Drain Current (Tc = 25°C) | 10 A |
| ID (Max) | Continuous Drain Current (Tc = 75°C) | 6 A |
| PD (Max) | Total Power Dissipation (Ta = 25°C) | 2.4 W |
| PD (Max) | Total Power Dissipation (Ta = 75°C) | 1.5 W |
| fT | Transition Frequency | 2 MHz |
| QG | Gate Charge | 12 nC |
| QGD | Gate-to-Drain Charge | 3 nC |
| QGS | Gate-to-Source Charge | 9 nC |
| Vth | Threshold Voltage | 1.0 to 2.0 V |
| Operating Temperature | Junction Temperature Range | -55°C to 150°C |
| Storage Temperature | Storage Temperature Range | -65°C to 150°C |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid damage to the leads and body.
- Use ESD (Electrostatic Discharge) protection measures to prevent damage from static electricity.
Mounting:
- Ensure that the device is mounted on a suitable heat sink if operating at high power levels to maintain the junction temperature within safe limits.
- Follow the recommended soldering profile to avoid thermal shock and ensure good mechanical and electrical connections.
Biasing:
- Apply the gate-to-source voltage (VGS) carefully to avoid exceeding the maximum ratings.
- Ensure that the gate is properly biased to achieve the desired on-state resistance and switching performance.
Thermal Management:
- Monitor the device temperature during operation to ensure it does not exceed the maximum junction temperature.
- Use thermal paste or thermal interface materials between the device and the heat sink for better thermal conductivity.
Testing:
- Test the device under controlled conditions to verify its performance and reliability.
- Use appropriate test equipment and methods to measure parameters such as on-state resistance and switching characteristics.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat.
- Keep the device in its original packaging until ready for use to protect it from environmental factors.
Inquiry - NSC810AN-4I
