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AM28F020-150PC

Specifications

SKU: 575951

BUY AM28F020-150PC https://www.utsource.net/itm/p/575951.html
2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory
Parameter Symbol Min Typical Max Unit
Supply Voltage Vcc 2.7 - 3.6 V
Standby Current ISB - 10 - μA
Active Current IOP - 20 - mA
Programming Current IPGM - 20 - mA
Erase Time TERS - 1.5 - s
Write Time (Byte) TWR - 200 - μs
Read Cycle Time TRC - 70 - ns
Data Retention - - 10 - years
Operating Temperature Toper -40 - 85 °C
Storage Temperature Tstg -65 - 150 °C

Instructions for Use:

  1. Power Supply:

    • Ensure the supply voltage is within the range of 2.7V to 3.6V.
    • Connect the Vcc pin to the positive power supply and GND to ground.
  2. Standby Mode:

    • To enter standby mode, set the chip enable (CE) pin high. The typical standby current is 10 μA.
  3. Active Mode:

    • To activate the device, set the CE pin low. The typical active current is 20 mA.
  4. Programming:

    • Before programming, ensure the programming current (IPGM) does not exceed 20 mA.
    • Follow the programming sequence as specified in the datasheet to write data to the memory.
  5. Erase Operation:

    • The erase operation typically takes 1.5 seconds. Ensure the device is not accessed during this time.
  6. Write Operation:

    • Writing a byte of data typically takes 200 μs. Ensure the device is not accessed during this time.
  7. Read Operation:

    • The read cycle time is 70 ns. Ensure the read operations are spaced accordingly to avoid data corruption.
  8. Data Retention:

    • The device retains data for up to 10 years under normal operating conditions.
  9. Temperature Considerations:

    • The operating temperature range is -40°C to 85°C.
    • The storage temperature range is -65°C to 150°C.
  10. Handling:

    • Handle the device with care to avoid electrostatic discharge (ESD) damage.
    • Use appropriate ESD protection measures when handling and storing the device.
(For reference only)

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