Specifications
SKU: 575951
2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Supply Voltage | Vcc | 2.7 | - | 3.6 | V |
Standby Current | ISB | - | 10 | - | μA |
Active Current | IOP | - | 20 | - | mA |
Programming Current | IPGM | - | 20 | - | mA |
Erase Time | TERS | - | 1.5 | - | s |
Write Time (Byte) | TWR | - | 200 | - | μs |
Read Cycle Time | TRC | - | 70 | - | ns |
Data Retention | - | - | 10 | - | years |
Operating Temperature | Toper | -40 | - | 85 | °C |
Storage Temperature | Tstg | -65 | - | 150 | °C |
Instructions for Use:
Power Supply:
- Ensure the supply voltage is within the range of 2.7V to 3.6V.
- Connect the Vcc pin to the positive power supply and GND to ground.
Standby Mode:
- To enter standby mode, set the chip enable (CE) pin high. The typical standby current is 10 μA.
Active Mode:
- To activate the device, set the CE pin low. The typical active current is 20 mA.
Programming:
- Before programming, ensure the programming current (IPGM) does not exceed 20 mA.
- Follow the programming sequence as specified in the datasheet to write data to the memory.
Erase Operation:
- The erase operation typically takes 1.5 seconds. Ensure the device is not accessed during this time.
Write Operation:
- Writing a byte of data typically takes 200 μs. Ensure the device is not accessed during this time.
Read Operation:
- The read cycle time is 70 ns. Ensure the read operations are spaced accordingly to avoid data corruption.
Data Retention:
- The device retains data for up to 10 years under normal operating conditions.
Temperature Considerations:
- The operating temperature range is -40°C to 85°C.
- The storage temperature range is -65°C to 150°C.
Handling:
- Handle the device with care to avoid electrostatic discharge (ESD) damage.
- Use appropriate ESD protection measures when handling and storing the device.
Inquiry - AM28F020-150PC