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BF621

Specifications

SKU: 604897

BUY BF621 https://www.utsource.net/itm/p/604897.html
PNP high-voltage transistors
Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage VCEO - - 45 V Maximum voltage between collector and emitter with base open
Emitter-Collector Voltage VEBO - - 6 V Maximum voltage between emitter and base with collector open
Base-Emitter Voltage (Saturation) VBE(sat) - 0.7 - V Voltage between base and emitter when transistor is saturated
Collector Current (Continuous) IC - - 0.5 A Maximum continuous collector current
Collector-Emitter Saturation Voltage VCE(sat) - 0.3 - V Voltage between collector and emitter when transistor is saturated
Power Dissipation PTOT - - 625 mW Maximum power dissipation at TA = 25°C
Operating Temperature Range TA -40 - 150 °C Ambient temperature range for operation
Storage Temperature Range TSTG -65 - 150 °C Temperature range for storage

Instructions for Use:

  1. Mounting: Ensure the BF621 is mounted with proper heat dissipation if used near its maximum power dissipation limits.
  2. Biasing: Apply appropriate biasing to the base to ensure the transistor operates within its safe operating area (SOA).
  3. Protection: Use external protection circuits such as diodes and resistors to prevent damage from voltage spikes and excessive current.
  4. Handling: Handle the BF621 with care to avoid static discharge, which can damage the device.
  5. Soldering: Solder the BF621 at temperatures not exceeding 260°C for a duration of 10 seconds to prevent thermal damage.
  6. Storage: Store the BF621 in a dry, cool place away from direct sunlight and extreme temperatures.
  7. Testing: Test the BF621 using a multimeter or a dedicated transistor tester to ensure it is functioning correctly before installation.
(For reference only)

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