Specifications
SKU: 604897
PNP high-voltage transistors
Parameter | Symbol | Min | Typ | Max | Unit | Description |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 45 | V | Maximum voltage between collector and emitter with base open |
Emitter-Collector Voltage | VEBO | - | - | 6 | V | Maximum voltage between emitter and base with collector open |
Base-Emitter Voltage (Saturation) | VBE(sat) | - | 0.7 | - | V | Voltage between base and emitter when transistor is saturated |
Collector Current (Continuous) | IC | - | - | 0.5 | A | Maximum continuous collector current |
Collector-Emitter Saturation Voltage | VCE(sat) | - | 0.3 | - | V | Voltage between collector and emitter when transistor is saturated |
Power Dissipation | PTOT | - | - | 625 | mW | Maximum power dissipation at TA = 25°C |
Operating Temperature Range | TA | -40 | - | 150 | °C | Ambient temperature range for operation |
Storage Temperature Range | TSTG | -65 | - | 150 | °C | Temperature range for storage |
Instructions for Use:
- Mounting: Ensure the BF621 is mounted with proper heat dissipation if used near its maximum power dissipation limits.
- Biasing: Apply appropriate biasing to the base to ensure the transistor operates within its safe operating area (SOA).
- Protection: Use external protection circuits such as diodes and resistors to prevent damage from voltage spikes and excessive current.
- Handling: Handle the BF621 with care to avoid static discharge, which can damage the device.
- Soldering: Solder the BF621 at temperatures not exceeding 260°C for a duration of 10 seconds to prevent thermal damage.
- Storage: Store the BF621 in a dry, cool place away from direct sunlight and extreme temperatures.
- Testing: Test the BF621 using a multimeter or a dedicated transistor tester to ensure it is functioning correctly before installation.
Inquiry - BF621