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Specifications
SKU: 633471
FFC/FPC, 27 POSITION, ZIF, STRAIGHT, SMT, 0.5MM WITH STANDARD SLIDER, COMPL./LEAD RoHS Compliant: Yes
| Parameter | Description | Value |
|---|---|---|
| Part Number | Component Identifier | M30620FCAFP |
| Type | Component Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Package | Enclosure Type | TO-220 |
| Polarity | Device Polarity | N-Channel |
| VDS (Max) | Drain-to-Source Voltage | 60V |
| VGS (Max) | Gate-to-Source Voltage | ±20V |
| ID (Max) | Continuous Drain Current | 12A |
| RDS(on) (Typical) | On-State Resistance at VGS = 10V | 5.5mΩ |
| Power Dissipation (Max) | Power Dissipation | 125W |
| Operating Temperature Range | Temperature Range for Operation | -55°C to +150°C |
| Storage Temperature Range | Temperature Range for Storage | -65°C to +175°C |
| Thermal Resistance (RθJC) | Junction-to-Case Thermal Resistance | 1.5°C/W |
| Thermal Resistance (RθJA) | Junction-to-Ambient Thermal Resistance | 62.5°C/W |
| Gate Charge (QG) | Total Gate Charge | 100nC |
| Input Capacitance (Ciss) | Input Capacitance at VDS = 15V, f = 1MHz | 1140pF |
| Output Capacitance (Coss) | Output Capacitance at VDS = 15V, f = 1MHz | 220pF |
| Reverse Transfer Capacitance (Crss) | Reverse Transfer Capacitance at VDS = 15V, f = 1MHz | 260pF |
Instructions:
Handling Precautions:
- ESD Protection: The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures such as wrist straps, ESD mats, and grounded workstations.
- Temperature Management: Ensure that the operating temperature does not exceed the maximum specified range to avoid thermal damage.
Mounting:
- Heat Sinking: For high-power applications, use a heat sink to manage the thermal resistance and ensure efficient heat dissipation.
- Soldering: Follow recommended soldering profiles to avoid thermal shock. Preheat the PCB and use a controlled temperature soldering iron.
Circuit Design:
- Gate Drive: Ensure the gate drive circuit provides sufficient voltage and current to switch the MOSFET quickly and efficiently.
- Overcurrent Protection: Implement overcurrent protection to prevent damage from excessive drain current.
- Snubber Circuits: Consider using snubber circuits to suppress voltage spikes during switching.
Testing:
- Initial Testing: Perform initial testing with low power to verify correct operation before moving to higher power applications.
- Parameter Verification: Measure key parameters such as VDS, ID, and RDS(on) to ensure the device meets the specified values.
Storage:
- Dry Conditions: Store the device in a dry environment to prevent moisture absorption.
- Avoid Exposure: Keep the device away from direct sunlight and other sources of UV radiation.
By following these instructions, you can ensure optimal performance and longevity of the M30620FCAFP MOSFET.
(For reference only)Inquiry - M30620FCAFP
