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Specifications
SKU: 655400
N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET
Below is the parameter table and instructions for the STP5NK80Z, a 50V N-Channel MOSFET from STMicroelectronics.
STP5NK80Z Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 50 | V | |
| Gate-Source Voltage | VGSS | -12 | - | 12 | V | |
| Continuous Drain Current | ID | - | 5.0 | - | A | TC = 25°C |
| Continuous Drain Current | ID | - | 3.5 | - | A | TC = 75°C |
| Continuous Drain Current | ID | - | 2.5 | - | A | TC = 100°C |
| Pulse Drain Current | ID(p) | - | 10.0 | - | A | tp = 10 ms, TC = 25°C |
| Power Dissipation | PD | - | - | 64 | W | TA = 25°C |
| Power Dissipation | PD | - | - | 40 | W | TA = 75°C |
| Power Dissipation | PD | - | - | 25 | W | TA = 100°C |
| Junction Temperature | TJ | - | - | 150 | °C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | |
| Gate Charge | QG | - | 9.0 | - | nC | VGS = 10V, ID = 5A |
| Input Capacitance | Ciss | - | 1200 | - | pF | VDS = 25V, f = 1 MHz |
| Output Capacitance | Coss | - | 250 | - | pF | VDS = 25V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 100 | - | pF | VDS = 25V, f = 1 MHz |
| Threshold Voltage | VGS(th) | 1.0 | 1.5 | 2.0 | V | ID = 250 μA |
| On-State Resistance | RDS(on) | - | 0.018 | - | Ω | VGS = 10V, ID = 5A |
| On-State Resistance | RDS(on) | - | 0.025 | - | Ω | VGS = 4.5V, ID = 5A |
| Total Gate Charge | QG | - | 9.0 | - | nC | VGS = 10V, ID = 5A |
Instructions for Use
Handling Precautions:
- The STP5NK80Z is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures such as grounding and ESD wrist straps.
- Avoid exposing the device to high temperatures or moisture.
Mounting and Soldering:
- Ensure that the PCB has a good thermal design to dissipate heat effectively.
- Use a soldering iron with a temperature between 260°C and 300°C.
- Do not apply excessive heat for more than 10 seconds to any single pin during soldering.
Operating Conditions:
- Ensure that the operating conditions do not exceed the maximum ratings provided in the table.
- Keep the junction temperature below 150°C to avoid thermal damage.
Gate Drive:
- The gate should be driven with a voltage between 4.5V and 10V for optimal performance.
- Use a low-impedance driver to minimize switching losses.
Thermal Management:
- Use a heatsink if the power dissipation exceeds the self-heating limits of the package.
- Ensure adequate airflow around the device to improve cooling.
Storage:
- Store the device in a dry, cool place away from direct sunlight.
- Follow the recommended storage temperature range of -55°C to 150°C.
Testing:
- Before using the device in a circuit, test it for basic functionality using a multimeter or a dedicated MOSFET tester.
- Verify the continuity between the drain and source when the gate is grounded and the resistance between the gate and source.
By following these instructions, you can ensure reliable and efficient operation of the STP5NK80Z in your application.
(For reference only)Inquiry - STP5NK80Z
