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Specifications
SKU: 672074
x8 EPROM
| Parameter | Description | Value |
|---|---|---|
| Part Number | NMC27C32Q-45 | |
| Type | EEPROM (Electrically Erasable Programmable Read-Only Memory) | |
| Capacity | Memory Size | 32 Kbit |
| Organization | Memory Organization | 4K x 8 |
| Vcc Operating Range | Supply Voltage Range | 2.7V to 5.5V |
| Icc | Active Current | 100 μA (Typical) |
| Standby Current | Standby Current | 1 μA (Maximum) |
| Access Time | Access Time | 45 ns (Maximum) |
| Data Retention | Data Retention Time | 100 years (Minimum) |
| Write Cycle | Write Cycle Time | 5 ms (Maximum) |
| Operating Temperature | Operating Temperature Range | -40°C to +85°C |
| Package | Package Type | SOIC-8 |
| Polarity | Address Polarity | Positive |
| Endurance | Write/Read Cycles | 1,000,000 cycles |
Instructions for Use
Power Supply:
- Ensure that the supply voltage (Vcc) is within the specified range of 2.7V to 5.5V.
- Connect Vcc to the positive power supply and GND to the ground.
Addressing:
- The device has 12 address lines (A0-A11) to access the 4K x 8 memory locations.
- Address lines should be set according to the desired memory location before initiating a read or write operation.
Data Input/Output:
- Data is transferred through the data lines (D0-D7).
- During a read operation, the data lines will output the data stored at the addressed location.
- During a write operation, the data lines should be set with the data to be written to the addressed location.
Control Signals:
- Chip Select (CS#): Active low signal to select the device. When CS# is low, the device is selected and can perform read/write operations.
- Output Enable (OE#): Active low signal to enable data output. When OE# is low, the data lines will output the data from the addressed location.
- Write Enable (WE#): Active low signal to initiate a write operation. When WE# is low, the data on the data lines is written to the addressed location.
Timing:
- Ensure that the access time (tAC) is not exceeded. The maximum access time is 45 ns.
- The write cycle time (tWC) is 5 ms. Do not initiate another write operation until the previous one is complete.
Endurance and Data Retention:
- The device supports up to 1,000,000 write/read cycles.
- Data retention is guaranteed for at least 100 years under the specified operating conditions.
Handling:
- Handle the device with care to avoid static damage.
- Follow proper soldering techniques to ensure reliable connections.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat.
By following these instructions, you can ensure optimal performance and longevity of the NMC27C32Q-45 EEPROM.
(For reference only)Inquiry - NMC27C32Q-45
