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4213BM

Specifications

SKU: 676000

BUY 4213BM https://www.utsource.net/itm/p/676000.html
MULTIPLIER-DIVIDER
Parameter Description Value
Part Number Component Identifier 4213BM
Type Device Type Bipolar Transistor
Polarity NPN or PNP NPN
Collector-Emitter Voltage (Vce) Maximum Voltage between Collector and Emitter 80 V
Emitter-Base Voltage (Veb) Maximum Voltage between Emitter and Base 5 V
Collector Current (Ic) Maximum Continuous Collector Current 1.5 A
Power Dissipation (Ptot) Maximum Power Dissipation 65 W
DC Current Gain (hFE) Minimum DC Current Gain at Ic = 150 mA 100
Transition Frequency (ft) Frequency at which hFE drops to 1 300 MHz
Storage Temperature Range (Tstg) Operating Temperature Range for Storage -55°C to +150°C
Operating Temperature Range (Tamb) Operating Temperature Range for Ambient -40°C to +125°C
Package Type Enclosure or Package Style TO-220
Mounting Type Method of Mounting Through-Hole

Instructions for Use

  1. Handling Precautions:

    • Handle the 4213BM with care to avoid static damage.
    • Use appropriate ESD (Electrostatic Discharge) protection equipment.
  2. Soldering:

    • Solder the leads at a temperature not exceeding 350°C for a duration of 10 seconds.
    • Allow the device to cool naturally after soldering.
  3. Thermal Management:

    • Ensure adequate heat sinking to manage power dissipation, especially when operating near the maximum power rating.
    • Use thermal grease to enhance heat transfer between the transistor and the heatsink.
  4. Biasing:

    • Ensure proper biasing to maintain the transistor in the desired operating region (cut-off, active, saturation).
    • Use appropriate base resistors to limit base current and prevent overheating.
  5. Storage:

    • Store the 4213BM in a dry, cool place within the specified storage temperature range.
    • Avoid exposure to corrosive environments.
  6. Testing:

    • Test the 4213BM using a multimeter or a transistor tester to verify its functionality.
    • Check for short circuits and open circuits between the pins.
  7. Circuit Design:

    • Refer to the datasheet for recommended circuit configurations and application notes.
    • Consider the impact of parasitic elements and stray capacitance in high-frequency applications.

By following these guidelines, you can ensure optimal performance and longevity of the 4213BM bipolar transistor.

(For reference only)

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