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STB6NK90Z

Specifications

SKU: 682281

BUY STB6NK90Z https://www.utsource.net/itm/p/682281.html
N-CHANNEL 900V - 1.56ohm - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET
Parameter Symbol Test Conditions Min Typical Max Unit
Breakdown Voltage V(BR)DSS ID = 250 μA - 900 - V
Drain-Source On-Resistance RDS(on) VGS = ±10 V, ID = 6 A - 0.075 - Ω
Gate Threshold Voltage VGS(th) ID = 1 mA, IDS = 250 μA 2.0 - 4.0 V
Input Capacitance Ciss VDS = 15 V, f = 1 MHz - 1500 - pF
Output Capacitance Coss VDS = 450 V, f = 1 MHz - 330 - pF
Reverse Transfer Capacitance Crss VDS = 450 V, ID = 1 mA, f = 1 MHz - 180 - pF
Continuous Drain Current ID TC = 25°C - 6 - A
Pulse Drain Current IDM t = 10 μs, TC = 25°C - 60 - A
Power Dissipation PD TC = 25°C - 180 - W
Junction Temperature Tj - - - 150 °C
Storage Temperature Tstg - -65 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the device to static electricity.
    • Handle the device with care to prevent mechanical damage.
  2. Mounting:

    • Ensure proper heat sinking to manage junction temperature.
    • Use appropriate mounting hardware to secure the device.
  3. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Ensure that the gate drive voltage is within the specified range to avoid damage.
  4. Thermal Management:

    • Monitor the junction temperature to ensure it does not exceed the maximum rating.
    • Use thermal paste or thermal interface materials for better heat dissipation.
  5. Operating Conditions:

    • Operate the device within the specified voltage and current limits.
    • Avoid exceeding the maximum power dissipation to prevent thermal runaway.
  6. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Follow recommended storage temperature ranges to maintain device integrity.
  7. Testing:

    • Use appropriate test equipment and methods to verify the device parameters.
    • Refer to the datasheet for specific test conditions and procedures.
(For reference only)

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