Specifications
SKU: 682282
N-CHANNEL 900V - 1.56ohm - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 900 | - | V |
Gate-Source Voltage | VGS | -15 | - | 15 | V |
Continuous Drain Current | ID | - | 6 | - | A |
Pulse Drain Current (tp = 8/200 μs) | ID(p) | - | 36 | - | A |
Gate Charge | QG | - | 147 | - | nC |
Input Capacitance | Ciss | - | 1920 | - | pF |
Output Capacitance | Coss | - | 450 | - | pF |
Reverse Transfer Capacitance | Crss | - | 330 | - | pF |
Total Power Dissipation | PTOT | - | 125 | - | W |
Junction Temperature | TJ | - | - | 175 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Handle the device with care to avoid mechanical damage.
- Use appropriate anti-static precautions to prevent damage from electrostatic discharge (ESD).
Thermal Management:
- Ensure adequate heat sinking to manage the power dissipation and keep the junction temperature within the specified limits.
- Refer to the thermal resistance data provided by the manufacturer for optimal heat sink design.
Electrical Connections:
- Connect the drain, source, and gate terminals correctly to avoid short circuits or incorrect biasing.
- Use short leads to minimize parasitic inductance and capacitance.
Operating Conditions:
- Do not exceed the maximum ratings for drain-source voltage, gate-source voltage, and continuous drain current.
- For pulse applications, ensure that the pulse duration and frequency are within the safe operating area (SOA).
Gate Drive:
- Use a gate resistor to control the switching speed and reduce ringing.
- Ensure the gate drive circuit can provide the necessary current to charge and discharge the gate capacitance quickly.
Protection Circuits:
- Implement overvoltage and overcurrent protection to safeguard the device during fault conditions.
- Consider using snubber circuits to dampen voltage spikes across the drain and source.
Storage and Transportation:
- Store the device in a dry, cool environment to prevent moisture damage.
- Follow the recommended storage temperature range to avoid degradation.
For more detailed information, refer to the datasheet and application notes provided by STMicroelectronics.
(For reference only)Inquiry - STB6NK90ZT4