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STB6NK90ZT4

Specifications

SKU: 682282

BUY STB6NK90ZT4 https://www.utsource.net/itm/p/682282.html
N-CHANNEL 900V - 1.56ohm - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET
Parameter Symbol Min Typical Max Unit
Drain-Source Voltage VDS - 900 - V
Gate-Source Voltage VGS -15 - 15 V
Continuous Drain Current ID - 6 - A
Pulse Drain Current (tp = 8/200 μs) ID(p) - 36 - A
Gate Charge QG - 147 - nC
Input Capacitance Ciss - 1920 - pF
Output Capacitance Coss - 450 - pF
Reverse Transfer Capacitance Crss - 330 - pF
Total Power Dissipation PTOT - 125 - W
Junction Temperature TJ - - 175 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the device with care to avoid mechanical damage.
    • Use appropriate anti-static precautions to prevent damage from electrostatic discharge (ESD).
  2. Thermal Management:

    • Ensure adequate heat sinking to manage the power dissipation and keep the junction temperature within the specified limits.
    • Refer to the thermal resistance data provided by the manufacturer for optimal heat sink design.
  3. Electrical Connections:

    • Connect the drain, source, and gate terminals correctly to avoid short circuits or incorrect biasing.
    • Use short leads to minimize parasitic inductance and capacitance.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for drain-source voltage, gate-source voltage, and continuous drain current.
    • For pulse applications, ensure that the pulse duration and frequency are within the safe operating area (SOA).
  5. Gate Drive:

    • Use a gate resistor to control the switching speed and reduce ringing.
    • Ensure the gate drive circuit can provide the necessary current to charge and discharge the gate capacitance quickly.
  6. Protection Circuits:

    • Implement overvoltage and overcurrent protection to safeguard the device during fault conditions.
    • Consider using snubber circuits to dampen voltage spikes across the drain and source.
  7. Storage and Transportation:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Follow the recommended storage temperature range to avoid degradation.

For more detailed information, refer to the datasheet and application notes provided by STMicroelectronics.

(For reference only)

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