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Specifications
SKU: 753250
Ultra high-Speed Switching Applications P-Channel Silicon MOSFETPMOSFET
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | - | - | 100 | V | - |
| Base-Emitter Voltage | VBE | - | - | 6.5 | V | - |
| Collector Current | IC | - | 10 | 15 | A | - |
| Base Current | IB | - | 0.5 | 1.5 | A | - |
| Power Dissipation | PT | - | - | 125 | W | TA = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature | TSTG | -55 | - | 150 | °C | - |
| Transition Frequency | fT | - | 2.5 | - | MHz | IC = 1A, VCE = 10V |
| Saturation Voltage | VCE(sat) | - | 1.8 | 2.8 | V | IC = 10A, IB = 1A |
| Emitter-Base Breakdown Voltage | VBR(EB) | - | - | 6.5 | V | IEBO = 1mA |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use appropriate mounting hardware to secure the device.
Biasing:
- Ensure that the base-emitter voltage (VBE) does not exceed the maximum rating.
- Provide sufficient base current (IB) to ensure the transistor is fully saturated when required.
Operating Conditions:
- Do not exceed the maximum collector-emitter voltage (VCE) or collector current (IC).
- Keep the power dissipation (PT) within the rated limits to avoid thermal damage.
Storage:
- Store the device in a dry, cool environment within the specified storage temperature range.
Handling:
- Handle the device with care to avoid mechanical stress or damage.
- Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
Testing:
- When testing, use appropriate test equipment and follow safety guidelines to avoid damaging the device.
Application Notes:
- Refer to application notes and datasheets for detailed circuit design and performance optimization.
Inquiry - 2SJ340
