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2SK3225(1)-Z-E1

Specifications

SKU: 753505

BUY 2SK3225(1)-Z-E1 https://www.utsource.net/itm/p/753505.html
SWITCHING N-CHANNEL POWER MOSFET
Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS - - 200 V -
Gate-Source Voltage VGS -10 - 10 V -
Drain Current ID - - 4 A VDS = 200V, TC = 25°C
Power Dissipation PTOT - - 60 W TC = 25°C
Junction Temperature TJ - - 175 °C -
Storage Temperature TSTG -55 - 150 °C -
Thermal Resistance RθJC - - 1.2 K/W -

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 2SK3225(1)-Z-E1 with care to avoid mechanical stress.
    • Ensure proper heat sinking to maintain junction temperature within specified limits.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use appropriate wire gauges to handle the maximum current ratings.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to control the drain current (ID).
    • Ensure that the gate is properly biased to avoid excessive power dissipation.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to prevent overheating.
    • Use thermal paste and heatsinks to improve heat dissipation.
  5. Storage:

    • Store the device in a dry, cool place within the storage temperature range.
    • Avoid exposure to extreme temperatures and humidity.
  6. Testing:

    • Perform initial testing at room temperature to verify functionality.
    • Gradually increase the load and monitor performance parameters.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use protective equipment such as gloves and goggles when handling the device.
(For reference only)

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