Specifications
SKU: 753505
SWITCHING N-CHANNEL POWER MOSFET
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | - | 200 | V | - |
Gate-Source Voltage | VGS | -10 | - | 10 | V | - |
Drain Current | ID | - | - | 4 | A | VDS = 200V, TC = 25°C |
Power Dissipation | PTOT | - | - | 60 | W | TC = 25°C |
Junction Temperature | TJ | - | - | 175 | °C | - |
Storage Temperature | TSTG | -55 | - | 150 | °C | - |
Thermal Resistance | RθJC | - | - | 1.2 | K/W | - |
Instructions for Use:
Mounting and Handling:
- Handle the 2SK3225(1)-Z-E1 with care to avoid mechanical stress.
- Ensure proper heat sinking to maintain junction temperature within specified limits.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use appropriate wire gauges to handle the maximum current ratings.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to control the drain current (ID).
- Ensure that the gate is properly biased to avoid excessive power dissipation.
Thermal Management:
- Monitor the junction temperature (TJ) to prevent overheating.
- Use thermal paste and heatsinks to improve heat dissipation.
Storage:
- Store the device in a dry, cool place within the storage temperature range.
- Avoid exposure to extreme temperatures and humidity.
Testing:
- Perform initial testing at room temperature to verify functionality.
- Gradually increase the load and monitor performance parameters.
Safety:
- Always follow safety guidelines when working with high voltages and currents.
- Use protective equipment such as gloves and goggles when handling the device.
Inquiry - 2SK3225(1)-Z-E1