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F82C836B25

Specifications

SKU: 766659

BUY F82C836B25 https://www.utsource.net/itm/p/766659.html

Parameter Value Unit
Part Number F82C836B25 -
Type MOSFET -
Configuration N-Channel -
Voltage (Vds) 80 V
Current (Id) 25 A
Power Dissipation 110 W
Gate Charge 150 nC
Rds(on) 3.6
Package TO-247 -

Instructions for Use:

  1. Handling Precautions:

    • Handle with care to avoid damage to the leads and body.
    • Use appropriate ESD (Electrostatic Discharge) protection to prevent damage to the device.
  2. Mounting:

    • Ensure proper alignment of the device on the PCB (Printed Circuit Board).
    • Solder the leads carefully to avoid overheating. Recommended soldering temperature is 260°C for 10 seconds.
  3. Thermal Management:

    • Use a heatsink if the device will be operating near its maximum power dissipation.
    • Ensure adequate ventilation or cooling to maintain the junction temperature within safe limits.
  4. Electrical Connections:

    • Connect the Drain (D), Source (S), and Gate (G) terminals correctly according to the circuit diagram.
    • Apply a suitable gate drive voltage to turn the MOSFET on and off.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight and sources of heat.
    • Keep in original packaging until ready for use to protect against static discharge.
  6. Testing:

    • Before final assembly, test the MOSFET using a multimeter or dedicated MOSFET tester to ensure it is functioning correctly.
    • Verify the continuity between the source and drain when the gate is driven high and open circuit when the gate is low.
(For reference only)

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