BUY IRF5210SPBF https://www.utsource.net/itm/p/827590.html
HEXFET Power MOSFET
Description: The IRF5210SPBF is a N-channel MOSFET manufactured by International Rectifier. It is designed for use in high-side switching applications. Features: Low On-Resistance: RDS(on) = 5.2mΩ Low Gate Charge: Qg = 10nC Low Threshold Voltage: VGS(th) = 2.5V Fast Switching Speed: tD(on) = 10ns High Current Rating: ID = 55A Operating Temperature Range: -55°C to 175°C Applications: DC-DC Converters Motor Control High-Side Switching Battery Management Systems Automotive Electronics (For reference only)