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Specifications
SKU: 827767
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET
Below is the parameter table and instructions for the STP55NF06, a 55V N-Channel MOSFET from STMicroelectronics.
STP55NF06 Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 55 | V | Tj = 25°C |
| Gate-Source Voltage | VGSS | -10 | - | 10 | V | |
| Continuous Drain Current | ID | - | - | 55 | A | TC = 25°C, Pulse |
| Continuous Drain Current | IDM | - | - | 110 | A | TC = 25°C, Pulse |
| Gate Charge | QG | - | 48 | - | nC | VGS = 10V, ID = 11A |
| Input Capacitance | Ciss | - | 1230 | - | pF | VDS = 10V, f = 1MHz |
| Output Capacitance | Coss | - | 190 | - | pF | VDS = 10V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 120 | - | pF | VDS = 10V, f = 1MHz |
| On-State Resistance | RDS(on) | - | 0.018 | - | Ω | VGS = 10V, ID = 11A, Tj = 25°C |
| Total Power Dissipation | PTOT | - | - | 180 | W | TC = 25°C |
| Junction to Ambient Thermal Resistance | RθJA | - | - | 62 | °C/W | |
| Junction to Case Thermal Resistance | RθJC | - | - | 1.5 | °C/W | |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C | |
| Operating Temperature Range | Top | -55 | - | 150 | °C |
Instructions for Use
Handling and Storage:
- Store the device in a dry, cool place.
- Handle the device with care to avoid static damage. Use ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use thermal paste or a thermal pad between the device and the heatsink to improve thermal conductivity.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to avoid damaging the gate oxide.
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
Current Handling:
- The continuous drain current (ID) should not exceed the maximum rating to prevent overheating and potential failure.
- For pulse applications, ensure that the pulse width and frequency are within the safe operating area (SOA).
Thermal Management:
- Monitor the junction temperature (Tj) to ensure it remains below the maximum operating temperature.
- Use a heatsink with adequate thermal resistance to dissipate the power dissipation effectively.
Testing:
- Test the device under controlled conditions to verify its performance.
- Use a suitable test setup to measure parameters such as on-state resistance (RDS(on)) and gate charge (QG).
Safety:
- Follow all safety guidelines and regulations when working with high voltages and currents.
- Ensure that the device is properly insulated and isolated to prevent electrical shock.
By following these instructions, you can ensure reliable and efficient operation of the STP55NF06 MOSFET.
(For reference only)Inquiry - STP55NF06
