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MJD112G

Specifications

SKU: 829626

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Complementary Darlington Power Transistors
The MJD112G is a PNP Bipolar Transistor manufactured by ON Semiconductor. It is a low voltage, low current, high speed switching device with a maximum collector-emitter voltage of 40V and a maximum collector current of 0.5A. Features: * Low voltage: 40V * Low current: 0.5A * High speed switching Applications: * Audio amplifiers * Motor control * Switching applications * General purpose switching and amplification (For reference only)

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