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Specifications
SKU: 840763
4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Below is the parameter table and instructions for the AM29F040B-70JD Flash Memory IC.
AM29F040B-70JD Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Supply Voltage | Vcc | 2.7 | 3.3 | 3.6 | V | |
| Standby Current | ISB | 1 | 5 | 10 | μA | Vcc = 3.3V, All pins high Z |
| Active Current (Read) | IAVR | - | 15 | 30 | mA | Vcc = 3.3V, fCLK = 66 MHz |
| Active Current (Write) | IAW | - | 20 | 40 | mA | Vcc = 3.3V, fCLK = 66 MHz |
| Access Time | tACC | 70 | - | - | ns | Vcc = 3.3V, fCLK = 66 MHz |
| Page Program Time | tPP | 200 | - | 400 | μs | Vcc = 3.3V, 256 bytes |
| Sector Erase Time | tSE | 100 | - | 200 | ms | Vcc = 3.3V, 64K bytes |
| Chip Erase Time | tCE | 1000 | - | 2000 | ms | Vcc = 3.3V, 4M bytes |
| Data Retention | - | 10 | - | - | years | Vcc = 3.3V, 25°C to 85°C |
| Operating Temperature Range | Toper | -40 | - | 85 | °C | |
| Storage Temperature Range | Tstg | -65 | - | 150 | °C |
Instructions for AM29F040B-70JD
Power Supply:
- Ensure that the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
- Use a stable power source to avoid voltage fluctuations that can cause data corruption or device failure.
Pin Configuration:
- Refer to the datasheet for the pin configuration and ensure all pins are correctly connected.
- Connect the Vcc pin to the power supply and GND pin to ground.
Initialization:
- After applying power, allow the device to stabilize before performing any operations.
- Set the chip select (CS#) pin low to enable the device.
Reading Data:
- Set the output enable (OE#) pin low to read data from the memory.
- Apply the address to the address lines (A0-A21).
- The data will be available on the data lines (DQ0-DQ7) after the access time (tACC).
Writing Data:
- Set the write enable (WE#) pin low to initiate a write operation.
- Apply the address to the address lines (A0-A21).
- Write the data to the data lines (DQ0-DQ7).
- Ensure the write pulse width is sufficient for reliable programming.
Erasing Data:
- To erase a sector, apply the appropriate command sequence as specified in the datasheet.
- For a chip erase, use the chip erase command.
- Wait for the erase time (tSE or tCE) to complete before accessing the memory.
Programming:
- Use the page program command to write data to a specific page.
- Ensure the page program time (tPP) is observed to avoid data corruption.
Temperature Considerations:
- Operate the device within the specified temperature range (-40°C to 85°C) to ensure reliable performance.
- Store the device in a temperature-controlled environment to prevent damage during storage.
Data Retention:
- The device is designed to retain data for at least 10 years under normal operating conditions.
- Avoid exposing the device to extreme temperatures or high humidity to maintain data integrity.
Handling Precautions:
- Handle the device with care to avoid static discharge, which can damage the IC.
- Use proper ESD protection measures when handling and testing the device.
For detailed information and specific command sequences, refer to the AM29F040B-70JD datasheet provided by the manufacturer.
(For reference only)Inquiry - AM29F040B-70JD
