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BD240CTU

Specifications

SKU: 850757

BUY BD240CTU https://www.utsource.net/itm/p/850757.html
PNP Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail
Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCE - - 80 V
Emitter-Base Voltage VEB - - 6.5 V Reverse
Collector Current IC - - 1.5 A Continuous
Power Dissipation PT - - 65 W TO-126 Case, θJA=62.5°C/W
Storage Temperature Range TSTG -55 - 150 °C
Operating Junction Temperature TJ -50 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking when operating at high power levels to maintain junction temperature within safe limits.
    • Handle with care to avoid mechanical damage, especially to the leads.
  2. Electrical Connections:

    • Connect the collector (C) to the load or power supply.
    • Connect the emitter (E) to ground or the return path.
    • Connect the base (B) to the control circuit, ensuring that the base-emitter voltage does not exceed the maximum rating.
  3. Thermal Management:

    • Use a heatsink if the device is expected to dissipate significant power (greater than a few watts).
    • Ensure adequate ventilation to prevent overheating.
  4. Storage and Operation:

    • Store the device in a dry, cool place away from direct sunlight.
    • Operate within the specified temperature range to avoid damage and ensure reliable performance.
  5. Testing:

    • Before installing, test the device using a multimeter or transistor tester to verify its functionality.
    • Check for short circuits and open circuits between the pins.
  6. Safety Precautions:

    • Do not exceed the maximum ratings listed in the parameter table.
    • Use appropriate protective equipment when handling high-voltage circuits.
    • Ensure that the device is properly insulated to prevent electrical shock.
(For reference only)

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