Specifications
SKU: 850757
PNP Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 80 | V | |
Emitter-Base Voltage | VEB | - | - | 6.5 | V | Reverse |
Collector Current | IC | - | - | 1.5 | A | Continuous |
Power Dissipation | PT | - | - | 65 | W | TO-126 Case, θJA=62.5°C/W |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | |
Operating Junction Temperature | TJ | -50 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking when operating at high power levels to maintain junction temperature within safe limits.
- Handle with care to avoid mechanical damage, especially to the leads.
Electrical Connections:
- Connect the collector (C) to the load or power supply.
- Connect the emitter (E) to ground or the return path.
- Connect the base (B) to the control circuit, ensuring that the base-emitter voltage does not exceed the maximum rating.
Thermal Management:
- Use a heatsink if the device is expected to dissipate significant power (greater than a few watts).
- Ensure adequate ventilation to prevent overheating.
Storage and Operation:
- Store the device in a dry, cool place away from direct sunlight.
- Operate within the specified temperature range to avoid damage and ensure reliable performance.
Testing:
- Before installing, test the device using a multimeter or transistor tester to verify its functionality.
- Check for short circuits and open circuits between the pins.
Safety Precautions:
- Do not exceed the maximum ratings listed in the parameter table.
- Use appropriate protective equipment when handling high-voltage circuits.
- Ensure that the device is properly insulated to prevent electrical shock.
Inquiry - BD240CTU