Specifications
SKU: 850833
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 30 | V | |
Emitter-Base Voltage | VEB | - | - | 6 | V | Reverse |
Collector Current | IC | - | - | 500 | mA | Continuous |
Power Dissipation | PT | - | - | 625 | mW | TA = 25°C |
Storage Temperature Range | TSTG | -65 | - | 150 | °C | |
Operating Temperature Range | TA | -65 | - | 150 | °C |
Instructions for Use:
Handling:
- Handle with care to avoid damage.
- Use appropriate ESD (Electrostatic Discharge) protection measures.
Mounting:
- Ensure proper alignment of the component during soldering.
- Avoid excessive heat during soldering; recommended soldering temperature is 260°C for 10 seconds.
Biasing:
- Ensure the base-emitter voltage (VBE) is within the specified range to prevent damage.
- Use appropriate biasing circuits to maintain stable operation.
Power Dissipation:
- Ensure adequate heat sinking if operating near the maximum power dissipation limit.
- Monitor the junction temperature to avoid exceeding the maximum operating temperature.
Storage:
- Store in a dry, cool place to prevent moisture damage.
- Follow recommended storage conditions to ensure long-term reliability.
Testing:
- Use a multimeter or transistor tester to verify the functionality of the MJE182STU before installation.
- Test under typical operating conditions to ensure performance meets specifications.
Inquiry - MJE182STU