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MJE182STU

Specifications

SKU: 850833

BUY MJE182STU https://www.utsource.net/itm/p/850833.html
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail
Parameter Symbol Min Typical Max Unit Conditions
Collector-Emitter Voltage VCE - - 30 V
Emitter-Base Voltage VEB - - 6 V Reverse
Collector Current IC - - 500 mA Continuous
Power Dissipation PT - - 625 mW TA = 25°C
Storage Temperature Range TSTG -65 - 150 °C
Operating Temperature Range TA -65 - 150 °C

Instructions for Use:

  1. Handling:

    • Handle with care to avoid damage.
    • Use appropriate ESD (Electrostatic Discharge) protection measures.
  2. Mounting:

    • Ensure proper alignment of the component during soldering.
    • Avoid excessive heat during soldering; recommended soldering temperature is 260°C for 10 seconds.
  3. Biasing:

    • Ensure the base-emitter voltage (VBE) is within the specified range to prevent damage.
    • Use appropriate biasing circuits to maintain stable operation.
  4. Power Dissipation:

    • Ensure adequate heat sinking if operating near the maximum power dissipation limit.
    • Monitor the junction temperature to avoid exceeding the maximum operating temperature.
  5. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Follow recommended storage conditions to ensure long-term reliability.
  6. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the MJE182STU before installation.
    • Test under typical operating conditions to ensure performance meets specifications.
(For reference only)

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