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IRFB3307PBF

Specifications

SKU: 855098

BUY IRFB3307PBF https://www.utsource.net/itm/p/855098.html
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRFB3307 with Lead Free Packaging
Parameter Symbol Test Conditions Min Typical Max Unit
Drain-Source Voltage VDS - -55 - 55 V
Gate-Source Voltage VGS - -12 - 12 V
Continuous Drain Current (TC = 25°C) ID - - 74 - A
Continuous Drain Current (TC = 100°C) ID - - 49 - A
Pulse Drain Current (TA = 25°C, tp = 10 μs, Duty Cycle = 1%) IDpeak - - 220 - A
Total Power Dissipation (TC = 25°C) PTOT - - 240 - W
Total Power Dissipation (TC = 100°C) PTOT - - 150 - W
Junction Temperature TJ - - - 175 °C
Storage Temperature Range TSTG - -65 - 150 °C
Thermal Resistance, Junction to Case RθJC - - 0.38 - °C/W
Thermal Resistance, Junction to Ambient RθJA - - 2.1 - °C/W

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is handled with care to avoid mechanical damage.
    • Use appropriate heat sinks or cooling methods to manage thermal resistance and maintain the junction temperature within safe limits.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly to avoid short circuits or incorrect operation.
    • Ensure that the gate-source voltage (VGS) does not exceed the maximum rating to prevent damage to the device.
  3. Operating Conditions:

    • Operate the device within the specified drain-source voltage (VDS) and continuous drain current (ID) ratings.
    • For pulse applications, ensure that the pulse drain current (IDpeak) and duty cycle do not exceed the specified limits.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it remains below the maximum rating.
    • Use the thermal resistance values (RθJC and RθJA) to design effective cooling solutions.
  5. Storage:

    • Store the device in a dry, cool environment within the specified storage temperature range (TSTG).
  6. Testing:

    • Perform regular testing to ensure the device is functioning within its specified parameters.
    • Use appropriate test equipment and procedures to avoid damaging the device during testing.
(For reference only)

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