Specifications
SKU: 876021
MOS Field Effect Power Transistors
2SJ137 is a P-channel silicon MOSFET manufactured by NEC. It is a power transistor designed for use in high-speed switching applications. Description: The 2SJ137 is a P-channel silicon MOSFET with a maximum drain current of 5.0 A and a maximum drain-source voltage of 30 V. It has a low on-resistance of 0.05 Ω and a fast switching speed of 1.0 ns. Features: Low on-resistance High-speed switching Low gate charge Low input capacitance High breakdown voltage Avalanche energy rated Applications: The 2SJ137 is suitable for use in high-speed switching applications such as DC-DC converters, motor control, and power management. It can also be used in high-frequency switching circuits, such as switching power supplies and RF amplifiers. (For reference only)
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